Polishing pad and manufacturing method therefor
Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm 3 , the hard segment content (HSC) being determined by the following formula (1): HSC=100×( r −1)×( Mdi+Mda )÷( Mg+r×Mdi +( r −1)× Mda ) (1).
1. A polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein
the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and
the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm 3 ,
the hard segment content (HSC) being determined by the following formula (1):
HSC=100×( r− 1)×( Mdi+Mda )÷( Mg+r×Mdi +( r− 1)× Mda ) (1),
wherein Mdi represents an average molecular weight of a polyisocyanate compound(s) constituting the polyurethane-polyurea resin per two isocyanate functional groups; Mg represents an average molecular weight of a polyol compound(s) constituting the polyurethane-polyurea resin per two hydroxyl functional groups; Mda represents an average molecular weight of a polyamine compound(s) constituting the polyurethane-polyurea resin per two amino functional groups; and r represents the equivalence ratio of isocyanate groups of the polyisocyanate compound(s) constituting the polyurethane-polyurea resin to hydroxyl groups of the polyol compound(s) constituting the polyurethane-polyurea resin,
the polyurethane-polyurea resin foam has a storage elastic modulus E′ of 1 to 30 MPa, the storage elastic modulus E′ being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and
the polyurethane-polyurea resin foam has a type A hardness of 20 to 55 degrees.
2. The polishing pad according to claim 1 , wherein the polyurethane-polyurea resin foam has a Y value in a range from 50 to 65, the Y value being determined by Y=HSC+65×D, wherein D represents a density (g/cm 3 ) and HSC is the value determined by the formula (1).
3. The polishing pad according to claim 1 , wherein
the polyurethane-polyurea resin foam has an average cell diameter of 120 to 185 μm.
4. The polishing pad according to claim 1 , wherein
the polyurethane-polyurea resin foam has a type D hardness of 5 to 35 degrees.
5. The polishing pad according to claim 1 , wherein
a layer harder than the polishing layer is laminated on a surface of the polishing layer, the surface being opposite from a polishing surface of the polishing layer.
6. A method for manufacturing the polishing pad according to claim 1 , the method comprising:
a provision step of providing an isocyanate group-containing compound (A), a polyisocyanate compound (B), a polyamine compound (D), a mixture liquid (E) comprising water, a foam stabilizer, and a reaction catalyst, and a gas non-reactive with all the components;
a mixing step of mixing at least the isocyanate group-containing compound (A), the polyisocyanate compound (B), the polyamine compound (D), the mixture liquid (E) comprising the water, the foam stabilizer, and the reaction catalyst, and the gas non-reactive with all the components with each other to obtain a mixture liquid for molding a foam;
a foam-molding step of molding a polyurethane-polyurea resin foam from the mixture liquid for molding a foam; and
a polishing layer formation step of forming a polishing layer having a polishing surface for polishing a workpiece from the polyurethane-polyurea resin foam.
7. The method for manufacturing the polishing pad according to claim 6 , wherein
in the provision step, a polyol compound (C-2) is further provided, and
in the mixing step, the polyol compound (C-2) is mixed.
8. The method for manufacturing the polishing pad according to claim 7 , wherein
in the provision step, the polyamine compound (D) and the polyol compound (C-2) are provided, with the equivalence ratio of amino groups of the polyamine compound (D) to the sum of the chemical equivalents of amino groups of the polyamine compound (D) and hydroxyl groups of the polyol compound (C-2) (the chemical equivalent of active hydrogen groups) being 0.70 to 0.97 (the amino groups (the amino groups+the hydroxyl groups)).
9. The method for manufacturing the polishing pad according to claim 6 , wherein
the polyamine compound (D) is a crude methylenebis(o-chloroaniline) (MOCA) which is a mixture of monomer and multimers of MOCA and which contains the multimers in an amount of 15% by mass or more.
10. The method for manufacturing the polishing pad according to claim 7 , wherein
the polyol compound (C-2) is poly(tetramethylene glycol) or poly(propylene glycol) having a number average molecular weight of 500 to 5000, or a mixture thereof.