Dynamic silk coatings for implantable devices
Provided herein relates to implantable devices and systems with dynamic silk coatings. In some embodiments, the dynamic silk coatings can be formed in situ or in vivo.
1. An implantable device comprising a silk body and a reservoir,
the silk body comprising an outer surface, wherein at least a portion of the outer surface comprises a silk coating;
the silk body further comprising conduits formed between the outer surface and the reservoir; and
the reservoir configured to hold a silk matrix therein, wherein the silk matrix forms the silk coating upon discharge from the reservoir onto the at least a portion of the outer surface through the conduits.
2. The implantable device of claim 1 , wherein the silk body comprises a lumen extending through the silk body or at least one compartment distributed within the silk body, wherein the lumen or the at least one compartment forms the reservoir.
3. The implantable device of claim 2 , wherein the silk matrix in the reservoir is a silk solution.
4. The implantable device of claim 1 , wherein the silk body comprises a first silk layer and a second silk layer, wherein an interlamellar space between the first silk layer and the second silk layer forms the reservoir.
5. The implantable device of claim 4 , wherein the interlamellar space between the first silk layer and the second silk layer comprises silk particles or powders.
6. The implantable device of claim 1 , wherein the at least a portion of the outer surface further comprises an electrically-conducting component, wherein the silk coating is formed on a surface of at least a portion of the electrically-conducting component.
7. The implantable device of claim 6 , wherein when the silk matrix is discharged onto the surface of at least the portion of the electrically-conducting component and forms a silk solution thereon, the silk solution forms a gel coating upon application of a first voltage to the silk solution through the electrically-conducting component, and wherein the gel coating turns to a solution upon application of a second voltage with a polarity opposite to the first voltage.
8. The implantable device of claim 6 , wherein the electrically-conducting component includes silk modified to be capable of conducting electricity.
9. The implantable device of claim 8 , wherein a tyrosine of a silk protein is modified to a sulfate group followed by polymerization of the modified tyrosine with a conducting polymer.
10. The implantable device of claim 8 , wherein the silk is doped with a conductive material.
11. The implantable device of claim 1 , wherein the implantable device is adapted to be an implantable brain penetrating electrode.
12. The implantable device of claim 11 , wherein the electrode has a tensile strength of at least about 2 MPa when the silk body is in a dry state.
13. The implantable device of claim 11 , wherein the electrode has a shear modulus of less than about 200 kPa upon contact of the silk body with a fluid.
14. A method of reducing biofouling around an implantable device upon implantation in a tissue comprising implanting the implantable device of claim 1 in a tissue, wherein the silk matrix is discharged from the reservoir onto a surface of an electrically-conducting component and forms a silk coating thereon, thereby reducing biofouling around the implantable device.
15. The method of claim 14 , wherein the silk matrix discharged onto the surface of the electrically-conducting component forms a silk solution thereon.
16. The method of claim 15 , wherein when a first voltage is applied to the silk solution through the electrically-conducting component, the silk solutions forms a gel coating onto the surface of the electrically-conducting component; and when a second voltage with a polarity opposite to the first voltage is applied to the gel coating, the gel coating turns to a solution, thereby renewing the silk coating around.