Transistors and methods for making them

1. A semiconductor composition comprising:

a soluble polyacene semiconductor;

a polymeric semiconducting binder;

wherein the polymeric semiconducting binder has a permittivity greater than 3.4 at 1000 Hz; and

wherein the polymeric semiconducting binder comprises triarylamine repeat units.

2. The semiconductor composition according to claim 1 , wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10 −7 cm 2 V −1 s −1 .

3. The semiconductor composition according to claim 2 , wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10 −6 cm 2 V −1 s −1 .

4. The semiconductor composition according to claim 1 , wherein at least one of the triarylamine repeat units is substituted by cyano groups or by groups which comprise cyano groups or by alkoxy groups.

5. The semiconductor composition according to claim 1 , wherein the triarylamine repeat units comprise at least one of:

6. The semiconductor composition according to claim 1 , wherein the polymeric semiconducting binder is represented by the Formula (I) comprising at least one of first and second monomer units:

wherein each R x is independently selected from hydrogen, an alkyl group, an alkoxy group, halogen, a nitro group or R y , where each R y is independently a cyano group (CN) or an organic group that includes at least one CN group, and wherein at least one of the repeat units is substituted by cyano groups or by groups which comprise cyano groups or by alkoxy groups;

the sum of indices (j+k+l) is at least 1;

each R Z is independently an alkyl group optionally substituted by one or more substituents selected from hydroxyl, alkoxy, alkylsulphonyl, halogen, cyano, nitro, amino and carboxyl;

A is independently in each occurrence hydrogen, halogen or any suitable end-capping group;

j and l are independently in each occurrence 0 to 4;

k is independently in each occurrence 0 to 5;

a is the number of first monomer units and is greater than or equal to 1; and

b is the number of second monomer units, which may be 0.

7. The semiconductor composition according to claim 6 , wherein the polymeric semiconducting binder has alkoxy substituents directly substituted onto an aromatic ring in at least one of the 2, 4 and 6 positions.

8. The semiconductor composition according to claim 6 , wherein the polymeric semiconducting binder has a cyano group attached to the aromatic ring by means of a linker group.

9. The semiconductor composition according to claim 8 , wherein the cyano group attached to the aromatic ring by means of a linker group comprises at least one of:

wherein each R x is independently selected from hydrogen, an alkyl group, an alkoxy group, halogen, a nitro group or R y , where each R y is independently a cyano group (CN) or an organic group that includes at least one CN group.

10. The semiconductor composition according to claim 6 , wherein the polymeric semiconducting binder has at least one of alkoxy and cyano substitution on the pendant aromatic ring.

11. The semiconductor composition according to claim 6 , wherein the polymeric semiconducting binder has methoxy groups on the 2,4-positions of the pendant aromatic ring.

12. The semiconductor composition according to claim 1 , wherein the polymeric semiconducting binder comprises the copolymer:

wherein a is the number of first monomer units and is greater than or equal to 1; and

b is the number of second monomer units.

13. The semiconductor composition according to claim 1 , wherein the polymeric semiconducting binder is represented by at least one of the Formula (VII), (VIII), (IXa) and (IXb), wherein each Formula comprises at least one of first and second monomer units:

wherein each R x is independently selected from hydrogen, an alkyl group, an alkoxy group, halogen, a nitro group or R y , where each R y is independently a cyano group (CN) or an organic group that includes at least one CN group, and wherein at least one of the repeat units is substituted by cyano groups or by groups which comprise cyano groups or by alkoxy groups;

the sum of indices (j+k+l) is at least 1;

each R Z is independently an alkyl group optionally substituted by one or more substituents selected from hydroxyl, alkoxy, alkylsulphonyl, halogen, cyano, nitro, amino and carboxyl;

A is independently in each occurrence hydrogen, halogen or any suitable end-capping group;

j and l are independently in each occurrence 0 to 4;

k is independently in each occurrence 0 to 5;

a is the number of first monomer units and is greater than or equal to 1;

b is the number of second monomer units, which may be 0; and

each R a and R b is independently selected from hydrogen and optionally substituted alkyl, alkaryl, aralkyl, alkoxy and polyalkoyloxy groups.

14. The semiconductor composition according to claim 1 , wherein the triarylamine repeat units comprise at least one of (II e), (II f), (II g) and (II h):

wherein each R x is independently selected from hydrogen, an alkyl group, an alkoxy group, halogen, a nitro group or R y , where each R y is independently a cyano group (CN) or an organic group that includes at least one CN group, and wherein at least one of the repeat units is substituted by cyano groups or by groups which comprise cyano groups or by alkoxy groups;

the sum of indices (j+k+l) is at least 1;

each R z is independently an alkyl group optionally substituted by one or more substituents selected from hydroxyl, alkoxy, alkylsulphonyl, halogen, cyano, nitro, amino and carboxyl;

j and l are independently in each occurrence 0 to 4;

k is independently in each occurrence 0 to 5; and

each R a and R b is independently selected from hydrogen and optionally substituted alkyl, alkaryl, aralkyl, alkoxy and polyalkoyloxy groups.

15. The semiconductor composition according to claim 1 , wherein the soluble polyacene semiconductor is represented by at least one of the Formula (A2), (A3) and (C):

wherein R 1 , R 4 , R 8 and R 11 are methyl groups and R f are ethyl or isopropyl groups,

wherein R 2 , R 3 , R 9 , R 10 are methyl groups and R f are ethyl or isopropyl groups,

wherein one of Y 1 and Y 2 denotes —CH═ or ═CH— and the other denotes —X′—;

one of Y 3 and Y 4 denotes —CH═ or ═CH— and the other denotes —X′—;

X′ is —O—, —S—, —Se—, or —NR′″—;

R s is cyclic, straight chain or branched alkyl or alkoxy having 1 to 20 carbon atoms, or aryl having 2 to 30 carbon atoms, all of which are optionally fluorinated or perfluorinated;

R t is H, F, Cl, Br, I, CN, straight chain or branched alkyl or alkoxy having 1 to 20 carbon atoms and optionally being fluorinated or perfluorinated, optionally fluorinated or perfluorinated aryl having 6 to 30 carbon atoms, or CO 2 R″, with R″ being H, optionally fluorinated alkyl having 1 to 20 carbon atoms, or optionally fluorinated aryl having 2 to 30 carbon atoms;

R′″ is H or cyclic, straight chain or branched alkyl with 1 to 10 carbon atoms;

m is 0 or; and

n is 0 or 1.

16. The semiconductor composition according to claim 15 , wherein the soluble polyacene semiconductor is represented by at least one of the Formula (Cl) and (C2):

wherein X′, R t and R s are as defined in claim 15 .

17. The semiconductor composition according to claim 1 , wherein the polymeric semiconducting binder comprises the copolymer:

wherein a is the number of first monomer units and b is the number of second monomer units, and wherein the soluble polyacene semiconductor comprises 1,4,8,11-tetramethyl bis-triethylsilylethynyl pentacene.

18. An organic thin film transistor in which the source and drain electrodes are bridged by a semiconductor composition according to claim 1 .

19. A solution of an organic semiconducting composition according to claim 1 for use in a process of manufacturing organic thin film transistors, the process comprising depositing an organic semiconducting composition by solution coating.

20. A process of manufacturing organic thin film transistors, the process comprising:

depositing an organic semiconducting composition according to claim 1 by solution coating.