Biasing in CMOS inverter
Biasing circuit for providing a supply voltage (Vdd) for an inverter based circuit. The biasing circuit is provided on a same die as the inverter based circuit, and includes a first shorted inverter circuit (T 1 , T 2 ) and a second shorted inverter circuit (T 3 , T 4 ). The first shorted inverter circuit (T 1 , T 2 ) is connected in parallel to a series configuration of the second shorted inverter circuit (T 3 , T 4 ) and a reference impedance (R). The first shorted inverter circuit (T 1 , T 2 ) and second shorted inverter circuit (T 3 , T 4 ) have different transistor geometries. A control circuit (T 5 -T 11 ) is connected to the first shorted inverter circuit (T 1 , T 2 ) and the second shorted inverter circuit (T 3 , T 4 ), and supplied with a main supply voltage (Vdd). The control circuit (T 5 -T 11 ) is arranged such that an equal current flows through the first shorted inverter circuit (T 1 , T 2 ) and second shorted inverter circuit (T 3 , T 4 ).
1. A biasing circuit for providing a supply voltage for an inverter based circuit,
wherein the biasing circuit is provided on a same die as the inverter based circuit,
the biasing circuit comprising a first shorted inverter circuit and a second shorted inverter circuit,
wherein the first shorted inverter circuit is connected in parallel to a series configuration of the second shorted inverter circuit and a reference impedance,
and the first shorted inverter circuit and second shorted inverter circuit have different transistor geometries,
further comprising a control circuit connected to the first shorted inverter circuit and the second shorted inverter circuit, and supplied with a main supply voltage,
the control circuit being arranged such that an equal current flows through the first shorted inverter circuit and second shorted inverter circuit.
2. The biasing circuit of claim 1 , wherein the first shorted inverter circuit and the second shorted inverter circuit comprise a PMOS transistor and a NMOS transistor connected to each other with their drain terminals and gate terminals.
3. The biasing circuit of claim 1 , wherein the different transistor geometries determine a ratio in number of instances of first and second shorted inverter circuit.
4. The biasing circuit of claim 1 , wherein the inverter based circuit comprises CMOS transconductance stages using inverters, wherein a transconductance parameter is determined according to
gm
=
2
(
a
-
1
)
a
R
,
wherein ‘a’ is the ratio and R is the reference impedance value.
5. The biasing circuit of claim 1 , wherein the control circuit comprises two current mirrors and a feedback amplifier configuration circuit.
6. The biasing circuit of claim 5 , wherein the current mirrors comprise a transistor of which the gate terminal and source terminal are connected to the gate terminal and source terminal, respectively, of a transistor in each of the first shorted inverter circuit and the second shorted inverter circuit.
7. The biasing circuit of claim 5 , wherein the feedback amplifier configuration circuit comprises a nullor circuit, having currents through the current mirrors as input and the supply voltage as output.
8. The biasing circuit of claim 5 , wherein the feedback amplifier configuration circuit comprises a compensation capacitor.
9. The biasing circuit of claim 1 , further comprising an output capacitor.
10. The biasing circuit of claim 1 , wherein the reference impedance comprises two resistors with impedance R.
11. The biasing circuit of claim 1 , wherein the reference impedance comprises switched capacitors.
12. A combination of a biasing circuit and an inverter based circuit comprising CMOS transconductance stages,
wherein the biasing circuit is arranged for providing a supply voltage for an inverter based circuit,
wherein the biasing circuit is provided on a same die as the inverter based circuit,
the biasing circuit comprising a first shorted inverter circuit and a second shorted inverter circuit,
wherein the first shorted inverter circuit is connected in parallel to a series configuration of the second shorted inverter circuit and a reference impedance,
and the first shorted inverter circuit and second shorted inverter circuit have different transistor geometries,
further comprising a control circuit connected to the first shorted inverter circuit and the second shorted inverter circuit, and supplied with a main supply voltage,
the control circuit being arranged such that an equal current flows through the first shorted inverter circuit and second shorted inverter circuit.
13. The combination of claim 12 , wherein the inverter based circuit comprises a CMOS inverter.
14. The combination of claim 12 , wherein the inverter based circuit comprises a gm-C filter circuit.