Method and device for manufacturing a barrier layer on a flexible substrate
The invention provides a method for manufacturing a barrier layer on a substrate, the method comprising: —providing a substrate with an inorganic oxide layer having a pore volume between 0.3 and 10 vol. %; —treating said substrate with an inorganic oxide layer in a glow discharge plasma, said plasma being generated by at least two electrodes in a treatment space formed between said two electrodes, said treatment space also being provided with a gas comprising Nitrogen compounds; and —the treating of the substrate in said treatment space is done at a temperature below 150° C., e.g. below 100° C. The invention further provides a device for manufacturing a barrier layer on a substrate.
1. A method for manufacturing a barrier layer on a substrate, the method comprising:
providing a substrate with an inorganic oxide layer having a pore volume between 0.3 and 10 vol. %;
treating said substrate with an inorganic oxide layer in a glow discharge plasma, said plasma being generated by at least two electrodes in a treatment space formed between said two electrodes, said treatment space also being provided with a gas comprising Nitrogen compounds; and
the treating of the substrate in said treatment space is done at a temperature below 150° C.
2. The method according to claim 1 , wherein the treatment of the substrate is done until a barrier with a top layer comprising between 1 to 3% Nitrogen-atom concentration is formed.
3. The method according to claim 1 , wherein the gas comprising Nitrogen compounds, comprises N 2 (nitrogen) and/or NH 3 (ammonia) and/or NO.
4. The method according to claim 1 , wherein the gas comprising Nitrogen compounds has a pressure between 0.1 and 10 atmosphere.
5. The method according to claim 1 , wherein the treating of the substrate in said treatment space is done for a duration of less than 10 minutes.
6. The method according to claim 1 , wherein the substrate is a flexible substrate.
7. The method according to claim 6 , wherein the electrodes are roll-electrodes, and the flexible layer is moved through the treatment space at a linear speed.
8. The method according to claim 1 , wherein the inorganic oxide layer of the provided substrate is a silicon-oxide layer.
9. The method according to claim 1 , wherein the top layer is between 5 and 15 nm thick.
10. The method according to claim 1 , wherein (i) the treatment of the substrate is done until a barrier with a top layer comprising between 1 to 3% Nitrogen-atom concentration is formed; (ii) the gas comprising Nitrogen compounds, comprises N 2 (nitrogen) and/or NH 3 (ammonia) and/or NO; (iii) the gas comprising Nitrogen compounds has a pressure between 0.1 and 10 atmosphere; and (iv) the treating of the substrate in said treatment space is done for a duration of less than 2 minutes.
11. The method according to claim 1 , wherein (i) the treatment of the substrate is done until a barrier with a top layer comprising between 1 to 3% Nitrogen-atom concentration is formed; (ii) the gas comprising Nitrogen compounds, comprises N 2 (nitrogen) and/or NH 3 (ammonia) and/or NO; (iii) the gas comprising Nitrogen compounds has a pressure between 0.6 and 2 atmosphere; and (iv) the treating of the substrate in said treatment space is done for a duration of less than 10 minutes.
12. The method according to claim 6 , wherein (i) the treatment of the substrate is done until a barrier with a top layer comprising between 1 to 3% Nitrogen-atom concentration is formed; (ii) the gas comprising Nitrogen compounds, comprises N 2 (nitrogen) and/or NH 3 (ammonia) and/or NO; (iii) the gas comprising Nitrogen compounds has a pressure between 0.1 and 10 atmosphere; and (iv) the treating of the substrate in said treatment space is done for a duration of less than 10 minutes.
13. The method according to claim 6 , wherein (i) the treatment of the substrate is done until a barrier with a top layer comprising between 1 to 3% Nitrogen-atom concentration is formed; (ii) the gas comprising Nitrogen compounds, comprises N 2 (nitrogen) and/or NH 3 (ammonia) and/or NO; (iii) the gas comprising Nitrogen compounds has a pressure between 0.6 and 2 atmosphere; and (iv) the treating of the substrate in said treatment space is done for a duration of less than 10 minutes.
14. The method according to claim 12 , wherein the inorganic oxide layer of the provided substrate is a silicon-oxide layer and wherein the top layer is between 5 and 15 nm thick.
15. The method according to claim 13 , wherein the inorganic oxide layer of the provided substrate is a silicon-oxide layer and wherein the top layer is between 5 and 15 nm thick.
16. The substrate according to claim 15 , wherein (i) the inorganic oxide layer of the provided substrate is a silicon-oxide layer; (ii) the substrate is a flexible polymeric substrate; and (iii) the top layer is between 7 and 12 nm thick.