IP Library › Granted Patent US 9,632,374
Granted Patent B2
US 9,632,374 · App. 14/129,582 · Granted Apr 25, 2017

Overvoltage protection circuit, power supply device, liquid crystal display device, electronic device and television set

Inventor: Kazuhiro Murakami (Kyoto, JP)
Assignee: Rohm Co., Ltd.
G02F1/136204H02H9/043H03K19/00315H01L27/0251
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Quick Facts
Patent No.
US 9,632,374
App. No.
14/129,582
Granted
Apr 25, 2017
Kind
B2
Abstract

An overvoltage protection portion ( 14 ) includes a transistor (P 1 ) that achieves continuity with an input voltage (VIN) used as an output voltage (VOUT) to an internal circuit when the input voltage (VIN) applied to an external terminal (T 1 ) is not in an overvoltage state. The overvoltage protection portion ( 14 ) also includes: a transistor (P 2 ) operating as a short circuit that short-circuits the source and the gate of the transistor (P 1 ) and that interrupts the input voltage (VIN) when the input voltage (VIN) is in the overvoltage state; a resistor (R 2 ); and a Zener diode (ZD 1 ). The overvoltage protection portion ( 14 ) also includes: a transistor (NTr 1 ) operating as a bypass circuit that supplies a constant output voltage (VOUT) from the external terminal (T 1 ) to the internal circuit when the input voltage (VIN) is brought into the overvoltage state; a resistor (R 3 ); and a Zener diode (ZD 2 ).

Claims (16)

1. An overvoltage protection circuit comprising:

a first P-channel field-effect transistor including a source connected to an input terminal and including a drain connected to an internal circuit;

a first resistor connected between a gate of the first P-channel field-effect transistor and a ground end;

a short circuit operable to short-circuit the source and the gate of the first transistor while an application voltage of the input terminal exceeds a predetermined threshold value; and

a bypass circuit operable to supply a constant voltage from the input terminal to the internal circuit while the voltage of the input terminal exceeds the threshold value,

wherein the short circuit includes:

a second P-channel field-effect transistor including a source connected to the input terminal and including a drain is connected to the gate of the first P-channel field-effect transistor;

a second resistor connected between a gate of the second P-channel field-effect transistor and the input terminal; and

a first Zener diode connected between the gate of the second P-channel field-effect transistor and the ground end,

wherein the bypass circuit includes:

an NPN transistor whose collector is connected to the input terminal and whose emitter is connected to the internal circuit;

a second Zener diode which is connected between a base of the NPN transistor and the ground end; and

a third resistor which is connected between the base of the NPN transistor and the input terminal, and

wherein each of the first P-channel field-effect transistor, the second P-channel field-effect transistor and the NPN transistor is high-voltage resistant as compared with an element of the internal circuit.

2. A semiconductor device that integrates the overvoltage protection circuit of claim 1 .

3. A liquid crystal display device comprising: the power supply circuit including the semiconductor device of claim 2 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 27, 2013
From: MURAKAMI, KAZUHIRO
To: ROHM CO., LTD.
Reel/Frame 031852/0726 →
Priority Claims (3)
JP 2011-147294 · Jul 1, 2011 · national
JP 2011-154882 · Jul 13, 2011 · national
JP 2011-162999 · Jul 26, 2011 · national
Continuity (1)
Related Publication 20140146426A1 · May 29, 2014