Process for manufacturing silicon carbide
A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cokes and a source of silicon, especially a silica having a purity of greater than 95% of SiO 2 , in order to give rise, at a temperature above 1500° C., to the simplified reaction: SiO 2 +3C=SiC+2CO (1), wherein the carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is less than 2% by weight.
1. A process for manufacturing SiC, wherein the emissions of polluting gases are minimized, comprising reducing silicon oxide by carbon according to an Acheson process, by electrically heating a resistor in a mixture of raw materials consisting of a carbon-based source selected from cokes and a silica having a purity of greater than 95% of SiO 2 , in order to give rise, at a temperature above 1500° C., to the simplified reaction:
SiO 2 +3C=SiC+2CO (1),
wherein said carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is between 0.5% and 0.01% by weight, wherein the hydrogen removal treatment is a controlled heat treatment of the coke in an electric furnace, under an inert atmosphere or is a heat treatment in a fired furnace between 1000° C. and 1350° C.
2. The process as claimed in claim 1 , wherein the residual elemental hydrogen content of the coke is between 0.1% and 0.01%.
3. The process as claimed in claim 2 , wherein the residual elemental hydrogen content of the coke is between 0.05% and 0.01%.
4. The process as claimed in claim 1 , wherein the hydrogen removal treatment is carried out in an atmosphere so that less than 5% by weight of the fixed carbon on the dry product is removed during the hydrogen removal treatment.
5. The process as claimed in claim 4 , wherein less than 1% by weight of the fixed carbon on the dry product is removed during the hydrogen removal treatment.
6. The process as claimed claim 1 , wherein the hydrogen removal treatment is a heat treatment in a fired furnace between 1250° C. and 1350° C.
7. The process as claimed in claim 1 , wherein the oxygen partial pressure of the calcination atmosphere is less than 5% of the total pressure of the gases.
8. The process as claimed in claim 7 , wherein the oxygen partial pressure of the calcination atmosphere is less than 1% of the total pressure of the gases.
9. The process as claimed in claim 1 , wherein the gases resulting from the hydrogen removal step are used at least partly as fuel for said fired furnace.
10. The process as claimed in claim 1 , wherein, on top of the reaction mixture positioned around the electrical resistor of the Acheson furnace, additional coverage means are put in place, coupled to means for collecting the gaseous products emitted during the synthesis of the SiC.
11. The process as claimed in claim 10 , wherein the gases collected are treated by burning off.
12. The process as claimed in claim 1 , wherein the carbon-based source is a petroleum coke.