Donor substrate and method for manufacturing organic light emitting diode display
A donor substrate for a laser transfer includes a base layer, a primer layer disposed on the base layer, a light-to-heat conversion layer disposed on the primer layer, and an intermediate layer disposed on the light-to-heat conversion layer, where the light-to-heat conversion layer includes graphene.
1. A donor substrate for a laser transfer comprising:
a base layer;
a primer layer disposed on the base layer;
a light-to-heat conversion layer disposed on the primer layer; and
an intermediate layer disposed on the light-to-heat conversion layer,
wherein the light-to-heat conversion layer comprises a light-to-heat conversion material and thermosetting resin, and wherein the light-to-heat conversion material comprises graphene, and wherein the thermosetting resin comprises a polyurethane having a glass transition temperature between 10 to 50° C.;
wherein the light-to-heat conversion material is in a range of about 25 wt % to about 40 wt % based on a total weight of the light-to-heat conversion layer.
2. The donor substrate for the laser transfer of claim 1 , wherein
light transmittance of the base layer is greater than about 90%.
3. The donor substrate for the laser transfer of claim 2 , wherein
the base layer comprises glass, a transparent film or a polymer film.
4. The donor substrate for the laser transfer of claim 2 , wherein
a thickness of the base layer is in a range of about 0.025 millimeter to about 0.15 millimeter.
5. The donor substrate of claim 1 , wherein
the graphene of the light-to-heat conversion material comprises a graphene sheet.
6. The donor substrate of claim 1 , wherein
the graphene of the light-to-heat conversion material comprises a plurality of graphene pieces, and
the light-to-heat conversion layer further comprises a dispersion material in which the graphene pieces are dispersed.
7. The donor substrate of claim 6 , wherein
the dispersion material comprises tetrahydrofuran or dichlorobenzene.
8. The donor substrate of claim 1 , wherein
a thickness of the intermediate layer is in a range of about 1.0 micrometer to about 3.0 micrometers.