Additives to improve the performance of a precursor source for cobalt deposition
View Patent ↗Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
1. A method of forming a cobalt thin film comprising:
adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule of a deposition tool; and
forming a cobalt film using the cobalt precursor comprising the additive, wherein non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
2. The method of claim 1 further comprising wherein the cobalt precursor comprises a dicobalt hexacarbonyl complexed alkyne precursor.
3. The method of claim 1 further comprising wherein the cobalt precursor comprises at least one of tert-butylacetylenedicobalthexacarbonyl (CCTBA), 2-hexynedicobalthexacarbonyl, and isopropylacetylenedicobalthexacarbonyl.
4. The method of claim 1 further comprising wherein the additive comprises a low volatility liquid dispersant that stabilizes the lifetime of the cobalt precursor in the ampoule.
5. The method of claim 4 further comprising wherein the cobalt precursor and decomposition products of the cobalt precursor are soluble in the additive.
6. The method of claim 4 further comprising wherein the low volatility liquid dispersant comprises at least one of a substituted arene, a long chain internal alkene, a long chain internal alkyne, a cyclic internal alkene, a cyclic internal alkyne, an alkyl halide, an alcohol, an ether, and an organoamine.
7. The method of claim 1 further comprising wherein the additive comprises about 1 to about 200 percent volume of the cobalt precursor.
8. The method of claim 1 further comprising wherein a volume of the additive decreases less than about 10 percent during a lifetime of ampoule use.
9. The method of claim 1 wherein the additive may comprise at least one of a linear, a branched and a cyclic long chain saturated hydrocarbon compound.
10. The method of claim 9 further comprising wherein at least one of a linear, a branched and a cyclic long chain saturated hydrocarbon compound comprises at least one of a C10 through a C20 compound.
11. The method of claim 1 further comprising wherein the additive comprises an ionic liquid.
12. The method of claim 11 further comprising wherein the ionic liquid comprises at least one of an imidazolium cation and a pyridinium cation, and a tetrafluoroborate anion, a hexafluorophosphate and a bistriflimide anion.
13. The method of claim 1 further comprising wherein the cobalt precursor and the additive are delivered out of the ampoule in consistent amounts during a cobalt deposition process.
14. The method of claim 1 further comprising wherein the additive is used to clean the ampoule prior to the addition of fresh precursor and additive in the ampoule.
15. The method of claim 1 further comprising wherein the additive comprises a solid dispersant comprising interconnected channels.
16. The method of claim 15 further comprising wherein the solid dispersant comprises a metal organic framework, wherein the inner walls of the channels are chemically inert to the cobalt precursor.
17. A method of depositing a cobalt film in a deposition tool comprising:
adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule coupled with the deposition tool; and
forming the cobalt film in a deposition chamber using the precursor comprising the additive, wherein a sludge is not formed in the ampoule.
18. The method of claim 17 further comprising bubbling a gas through the ampoule during a cobalt deposition process.
19. The method of claim 17 further comprising wherein the cobalt precursor is a solid precursor, and wherein the additive is capable of lowering the melting point of the precursor and solubilizing the cobalt precursor.
20. The method of claim 17 further comprising wherein the additive is used to clean the ampoule by utilizing an automated precursor delivery system.
21. The method of claim 17 further comprising wherein the cobalt precursor comprises a dicobalt hexacarbonyl complexed alkyne, and wherein the additive comprises a low volatility liquid dispersant.
22. A method of forming a cobalt film, comprising:
forming a mixture in an ampoule coupled with a deposition tool, wherein the mixture comprises a cobalt precursor and an additive that solubilizes the non-volatile decomposition products of the cobalt precursor; and
introducing the cobalt precursor into a deposition chamber of a deposition tool, wherein a cobalt film is formed on a microelectronic device.
23. The method of claim 22 further comprising wherein the ampoule does not comprise a sludge material.
24. The method of claim 22 further comprising a bubbling system for bubbling a gas through the ampoule.
25. The method of claim 22 wherein the deposition tool comprises a chemical vapor deposition tool.
26. The method of claim 22 wherein the cobalt precursor comprises a dicobalt hexacarbonyl complexed alkyne cobalt precursor, and wherein the additive comprises a low volatility liquid dispersant.