Nitrogen-containing ligands and their use in atomic layer deposition methods
Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.
1. A metal coordinating ligand having a formula
or a protonated form thereof, wherein each R is independently C 1-6 acyl, aldehyde, keto or C 2-4 alkenyl.
2. An apparatus comprising:
a deposition chamber; and
the metal coordinating ligand of claim 1 .
3. The apparatus of claim 2 , wherein the metal coordinating ligand is in the vapor phase.
4. A metal coordination complex comprising a transition metal ion or a boron group ion M complexed with the metal coordinating ligand of claim 1 .
5. The metal coordination complex of claim 4 , wherein the transition metal ion or the boron group ion is selected from the group consisting of aluminum, titanium, tungsten, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, palladium, platinum, rhodium, iridium, silver, gold, hafnium, manganese, ruthenium and copper.
6. An apparatus comprising:
a deposition chamber; and
the metal coordination complex of claim 4 .
7. The apparatus of claim 6 , wherein the metal coordination complex is in the vapor phase.