Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.
1. A photoresist deposition system comprising:
a vacuum chamber having a heating element and cooled chuck to hold a substrate,
the vacuum chamber having a heated inlet; and
a vapor deposition system connected to the heated inlet to volatilize a precursor into the vacuum chamber and to condense a vapor deposited photoresist over the substrate cooled by the cooled chuck.
2. The system as claimed in claim 1 wherein the vapor deposition system varies deposition composition and conditions during vapor deposition.
3. The system as claimed in claim 1 wherein the vapor deposition system provides the precursor of a volatile metal oxide for depositing the vapor deposited photoresist.
4. The system as claimed in claim 1 wherein the vapor deposition system provides the precursor of a metal alkoxide for depositing the vapor deposited photoresist.
5. The system as claimed in claim 1 wherein the vacuum chamber is for reacting the precursor with an oxidizing agent to convert a metal oxide precursor into a metal oxide photoresist.
6. The system as claimed in claim 1 wherein the vacuum chamber is for driving a gas phase reaction resulting in a molecular deposition over the substrate.
7. The system as claimed in claim 1 wherein the vapor deposition system is for reacting a ligand precursor that initiates a ligand replacement reaction around a metal center.
8. The system as claimed in claim 1 wherein the vapor deposition system is for providing a ligand precursor for bonding with a metal oxide formed in the vacuum chamber.