Nonvolative memory with filament
View Patent ↗An embodiment, relates to a phase changeable memory cell. The phase changeable memory cell is formed with an ultra small contact area formed by filament conductive path. This contact area between a heating electrode and phase changeable material layer is determined by the forming of filament path, which is conductive and much smaller in cross-sectional area than the minimum area that can be achieved by lithography. This leads to high heating efficiency and ultra-low programming current. As the disclosed structure has no requirement on endurance for the formed filament and use phase changeable material rather than filament-forming material to provide high on/off resistance ratio, drawbacks of filament-forming material on low endurance and low sensing margin are avoided in the proposed cell structure. Therefore, by using ReRAM-related filament-forming materials to get sub-litho-dimension conductive path as heating electrode and using high on/off ratio phase changeable material as the storage media, it is possible to reduce the power consumption of phase changeable memory dramatically without the drawbacks of filament-forming materials that are shown in ReRAM.
1. A method of forming a memory cell comprising:
providing a substrate;
forming a first electrode;
forming a second electrode; and
forming a resistive stack in between the first and second electrodes, wherein the resistive stack comprises
a storage layer having first and second major surfaces,
a storage dielectric layer having first and second major surfaces which are parallel to the first and second major surfaces of the storage layer, wherein when subjected to a forming process, one or more filaments are formed in the storage dielectric layer, and
a dielectric layer which is disposed in between and contacts the second major surface of the storage layer and the first major surface of the storage dielectric layer, wherein the storage layer, storage dielectric layer and dielectric layer of the resistive stack comprise about the same surface dimensions.
2. The method of claim 1 wherein the dielectric layer comprises a thickness of about 2-20 nm.
3. The method of claim 1 wherein:
the first electrode is a bottom electrode (BE);
the second electrode is a top electrode (TE);
the storage dielectric layer is adjacent to the TE; and
wherein the TE is coupled to a current source to facilitate forming the one or more filaments in the storage dielectric layer.
4. The method of claim 3 wherein the first and second electrodes and resistive stack form a storage stack, and sidewalls of the storage stack are vertical.
5. The method of claim 1 wherein:
the first electrode is a top electrode (TE);
the second electrode is a bottom electrode (BE);
the storage dielectric layer is adjacent to the BE; and
wherein the BE is coupled to a current source to facilitate forming the one or more filaments in the storage dielectric layer.
6. The method of claim 5 wherein the first and second electrodes and resistive stack form a storage stack, and sidewalls of the storage stack are vertical.
7. The method of claim 5 wherein the first electrode and resistive stack form a storage stack, and the second electrode has a smaller surface area than the storage stack.
8. A memory cell comprising:
a substrate;
a first electrode;
a second electrode; and
a resistive stack in between the first and second electrodes, wherein the resistive stack comprises
a storage layer having first and second major surfaces,
a storage dielectric layer having first and second major surfaces which are parallel to the first and second major surfaces of the storage layer, wherein when subjected to a forming process, one or more filaments are formed in the storage dielectric layer, and
a dielectric layer which is disposed in between and contacts the second major surface of the storage layer and the first major surface of the storage dielectric layer, wherein the storage layer, storage dielectric layer and dielectric layer of the resistive stack comprise about the same surface dimensions.
9. The memory cell of claim 8 wherein the dielectric layer comprises a thickness of about 2-20 nm.
10. The memory cell of claim 8 wherein:
the first electrode is a bottom electrode (BE);
the second electrode is a top electrode (TE);
the storage dielectric layer is adjacent to the TE; and
wherein the TE is coupled to a current source to facilitate forming the one or more filaments in the storage dielectric layer.
11. The memory cell of claim 8 wherein:
the first electrode is a top electrode (TE);
the second electrode is a bottom electrode (BE);
the storage dielectric layer is adjacent to the BE; and
wherein the BE is coupled to a current source to facilitate forming the one or more filaments in the storage dielectric layer.
12. The memory cell of claim 8 wherein the first electrode and resistive stack form a storage stack, and the second electrode has a smaller surface area than the storage stack.
13. A method of forming a device comprising:
providing a substrate and a cell selector on the substrate; and
forming a storage stack, wherein the storage stack comprises
first and second electrodes,
a storage layer having first and second major surfaces, wherein the first major surface is in contact with the first electrode,
a storage dielectric layer having first and second major surfaces which are parallel to the first and second major surfaces of the storage layer, the second major surface of the storage dielectric layer is in contact with the second electrode, wherein when subjected to a forming process, one or more filaments are formed in the storage dielectric layer, and
a dielectric layer which is disposed in between and contacts the second major surface of the storage layer and the first major surface of the storage dielectric layer wherein the storage layer, storage dielectric layer and dielectric layer of the storage stack comprise about the same surface dimensions.
14. The method of claim 13 wherein the storage stack is in communication with the cell selector.
15. The method of claim 13 wherein the first electrode has a smaller surface dimension than other layers of the storage stack.
16. The method of claim 13 wherein the dielectric layer comprises a thickness of about 2-20 nm.
17. The method of claim 13 wherein:
the dielectric layer is a silicon oxide layer; and
the dielectric layer serves as a breakdown dielectric layer or a protective layer.
18. The method of claim 13 wherein the storage layer comprises dielectric islands.
19. The method of claim 13 wherein the cell selector comprises a metal oxide semiconductor (MOS) transistor, a bipolar junction transistor (BJT) or diode.