Method for manufacturing semiconductor device
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer;
performing a heat treatment on the oxide semiconductor layer in a chamber, whereby a carrier concentration in the oxide semiconductor layer is higher than or equal to 1×10 18 cm −3 ;
introducing oxygen into the chamber after the heat treatment; and
forming an insulating layer including oxygen over and in contact with a part of the oxide semiconductor layer, whereby a carrier concentration in the part of the oxide semiconductor layer is lower than 1×10 18 cm −3 ,
wherein the heat treatment is performed under an inert atmosphere or under reduced pressure, and
wherein a hydrogen concentration in the oxide semiconductor layer is lower than 3×10 20 cm −3 after the heat treatment.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the inert atmosphere is a nitrogen atmosphere or a rare gas atmosphere.
3. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the heat treatment is performed at a temperature higher than or equal to 400° C.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor layer includes a crystal.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises indium and zinc.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises a material selected from the group consisting of In—Sn—Zn—O-based oxide semiconductor; an In—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxide semiconductor; an Al—Ga—Zn—O-based oxide semiconductor; a Sn—Al—Zn—O-based oxide semiconductor; an In—Zn—O-based oxide semiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-based oxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-based oxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-based oxide semiconductor.
8. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer;
performing a heat treatment on the oxide semiconductor layer in a chamber, whereby the oxide semiconductor layer comprises an oxide semiconductor in an oxygen-deficiency state;
introducing oxygen into the chamber after the heat treatment; and
forming an insulating layer including oxygen over and in contact with a part of the oxide semiconductor layer, whereby the part of the oxide semiconductor layer comprises an oxide semiconductor in an oxygen-excess state,
wherein the heat treatment is performed under an inert atmosphere or under reduced pressure, and
wherein a hydrogen concentration in the oxide semiconductor layer is lower than 3×10 20 cm −3 after the heat treatment.
9. The method for manufacturing a semiconductor device according to claim 8 , wherein the inert atmosphere is a nitrogen atmosphere or a rare gas atmosphere.
10. The method for manufacturing a semiconductor device according to claim 8 , further comprising the step of forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer.
11. The method for manufacturing a semiconductor device according to claim 8 , wherein the heat treatment is performed at a temperature higher than or equal to 400° C.
12. The method for manufacturing a semiconductor device according to claim 8 , wherein the oxide semiconductor layer includes a crystal.
13. The method for manufacturing a semiconductor device according to claim 8 , wherein the oxide semiconductor layer comprises indium and zinc.
14. The method for manufacturing a semiconductor device according to claim 8 , wherein the oxide semiconductor layer comprises a material selected from the group consisting of In—Sn—Zn—O-based oxide semiconductor; an In—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxide semiconductor; an Al—Ga—Zn—O-based oxide semiconductor; a Sn—Al—Zn—O-based oxide semiconductor; an In—Zn—O-based oxide semiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-based oxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-based oxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-based oxide semiconductor.
15. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer;
performing dehydration or dehydrogenation on the oxide semiconductor layer in a chamber, whereby the oxide semiconductor layer comprises an n-type oxide semiconductor;
introducing oxygen into the chamber after the dehydration or the dehydrogenation; and
forming an oxide insulating layer over and in contact with the oxide semiconductor layer, whereby the oxide semiconductor layer comprises an i-type oxide semiconductor,
wherein the dehydration or the dehydrogenation is performed under an inert atmosphere or under reduced pressure, and
wherein a hydrogen concentration in the oxide semiconductor layer is lower than 3×10 20 cm −3 after the dehydration or the dehydrogenation.
16. The method for manufacturing a semiconductor device according to claim 15 , wherein the inert atmosphere is a nitrogen atmosphere or a rare gas atmosphere.
17. The method for manufacturing a semiconductor device according to claim 15 , further comprising the step of forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer.
18. The method for manufacturing a semiconductor device according to claim 15 , wherein the dehydration or the dehydrogenation is performed at a temperature higher than or equal to 400° C.
19. The method for manufacturing a semiconductor device according to claim 15 , wherein the oxide semiconductor layer includes a crystal.
20. The method for manufacturing a semiconductor device according to claim 15 , wherein the oxide semiconductor layer comprises indium and zinc.
21. The method for manufacturing a semiconductor device according to claim 15 , wherein the oxide semiconductor layer comprises a material selected from the group consisting of In—Sn—Zn—O-based oxide semiconductor; an In—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxide semiconductor; an Al—Ga—Zn—O-based oxide semiconductor; a Sn—Al—Zn—O-based oxide semiconductor; an In—Zn—O-based oxide semiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-based oxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-based oxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-based oxide semiconductor.