Method of fabricating a transflective liquid crystal display device

1. A method for fabricating a transflective liquid crystal display, comprising:

forming a gate electrode and a gate line at a pixel part of a first substrate;

forming a first insulation film on the first substrate;

forming an active pattern over the gate electrode, and an n+ amorphous silicon thin film pattern and a conductive film pattern on the active pattern;

forming source and drain electrode patterns formed of a transparent conductive film on the conductive film pattern and over the active pattern;

forming source and drain electrodes on the source and drain electrode patterns, respectively, and over the active pattern, and forming a data line crossing the gate line to define a pixel region including a reflective portion and a transmissive portion;

forming a pixel electrode extending from the drain electrode pattern at the transmissive portion of the pixel region;

forming a second insulation film exposing a portion of the drain electrode and a portion of the pixel electrode on the first substrate;

forming a reflective electrode formed of an opaque conductive film on the second insulation film at the reflective portion of the pixel region, the reflective electrode contacting the exposed portion of the drain electrode and contacting the exposed portion of the pixel electrode; and

attaching the first substrate to a second substrate.

2. The method of claim 1 , further comprising:

forming a gate pad line at a first pad part of the first substrate; and

removing a portion of the first insulation film to form a contact hole exposing a portion of the gate pad line,

wherein the forming of the active pattern, the n+ amorphous silicon thin film pattern, and the conductive film pattern, and the removing of the portion of the first insulation film are performed using a single half-tone mask.

3. The method of claim 2 , further comprising:

forming a gate pad electrode electrically connected with the gate pad line via the contact hole.

4. The method of claim 2 , wherein the forming of the active pattern, the n+ amorphous silicon thin film pattern, and the conductive film pattern, and the removing of the portion of the first insulation film using the half-tone mask include:

forming an amorphous silicon thin film, an n+ amorphous silicon thin film, and a conductive film over the first substrate, the gate electrode, the gate line, and the gate pad line;

forming a photoresist film over the conductive film;

selectively irradiating light on the photoresist film through the half-tone mask to form first and second photosensitive film patterns from the photoresist film, and to remove a portion of the photoresist film above the gate pad line; and

using the first and second photosensitive film patterns as a mask to selectively remove the conductive film, the n+ amorphous silicon thin film, the amorphous silicon thin film, and the first insulation film above the gate pad line to form the contract hole.

5. The method of claim 4 , wherein the forming of the active pattern, the n+ amorphous silicon thin film pattern, and the conductive film pattern, and the removing of the portion of the first insulation film using the half-tone mask further include:

removing the second photosensitive film to expose a portion of the conductive film not covered by the first photosensitive film, and removing a portion of the first photosensitive film to form a third photosensitive film over the gate electrode; and

using the third photosensitive film as a mask to selectively remove portions of the conductive film, the n+ amorphous silicon thin film, and the amorphous silicon thin film to form the conductive film pattern, the n+ amorphous silicon thin film pattern, and the active pattern, respectively.

6. The method of claim 1 , wherein the conductive film pattern is a barrier metal layer and is formed to have the same form as the n+ amorphous silicon thin film pattern.

7. The method of claim 1 , further comprising:

forming a data pad line at a second pad part of the first substrate.

8. The method of claim 7 , further comprising:

forming a data pad electrode electrically connected with the data pad line at the second pad part of the first substrate.

9. The method of claim 1 , wherein respective lower portions of the source and drain electrode patterns contact an upper portion of the first insulation film, and upper portions of the source and drain electrode patterns contact lower portions of the source and drain electrodes, respectively.

10. The method of claim 1 , wherein:

the gate electrode and the gate line are formed from a first conductive film;

the conductive film pattern is formed from a second conductive film; and

the forming of the source and drain electrodes, the data line, and the pixel electrode includes:

forming third and fourth conductive films over the first substrate with the conductive film pattern formed thereon; and

selectively removing portions of the third and the fourth conductive films through a single masking process to form the pixel electrode from the third conductive film and to form the source electrode, the drain electrode, and the data line from the fourth conductive film.

11. The method of claim 1 , wherein the forming of the source and drain electrodes includes forming the source and drain electrodes over the conductive film pattern, and

wherein the conductive film pattern has a width smaller than the gate electrode.

12. A method for fabricating a transflective liquid crystal display, comprising:

forming a gate electrode and a gate line from a first conductive film at a pixel part of a first substrate through a first masking process;

forming a first insulation film on the first substrate;

forming an active pattern over the gate electrode, an n+ amorphous silicon thin film pattern on the active pattern, and a conductive film pattern from a second conductive film on the n+ amorphous silicon thin film pattern, through a second masking process;

forming third and fourth conductive films over the first substrate having the conductive film pattern formed thereon;

selectively removing portions of the third and the fourth conductive films through a third masking process to form source and drain electrode patterns from the third conductive film on the conductive film pattern and at the same time to form a source electrode, a drain electrode and a data line from the fourth conductive film, the source and drain electrodes being formed on the source and drain electrode patterns, respectively, the data line crossing the gate line to define a pixel region including a reflective portion and a transmissive portion;

forming a pixel electrode extending from the drain electrode pattern at the transmissive portion of the pixel region through the third masking process;

forming a second insulation film on the first substrate with the source electrode and the drain electrode formed thereon;

forming a reflective electrode from an opaque conductive film over the source and drain electrodes at the reflective portion of the pixel region; and

attaching the first substrate to a second substrate.

13. The method of claim 12 , further comprising:

forming a pixel electrode pattern formed from the fourth conductive film above the pixel electrode and patterned according to a shape of the pixel electrode, and

removing portions of the n+ amorphous silicon thin film pattern and the conductive film pattern to form an ohmic-contact layer and a barrier metal layer, respectively.

14. The method of claim 13 , wherein the source and drain electrodes are formed to electrically connect with the source and drain regions of the active pattern, respectively, via the ohmic-contact layer and the barrier metal layer.

15. The method of claim 13 , further comprising:

selectively removing portions of the second insulation film and the pixel electrode pattern through a fourth masking process to expose a side wall portion of the drain electrode and an upper surface portion of the pixel electrode of the pixel part.

16. The method of claim 12 , wherein the n+ amorphous silicon thin film pattern and the conductive film pattern are formed to have a same form as the active pattern.

17. The method of claim 13 , further comprising:

selectively removing the second insulation film to open the pixel region and a pad part through a fourth masking process.

18. The method of claim 17 , further comprising:

selectively removing the pixel electrode pattern to expose the pixel electrode.

19. The method of claim 12 , wherein the second insulation film is formed to expose a portion of the drain electrode and a portion of the pixel electrode; and

wherein the reflective electrode is formed to contact the exposed portion of the drain electrode and the exposed portion of the pixel electrode.

20. The method of claim 12 , wherein respective lower portions of the source and drain electrode patterns contact an upper portion of the first insulation film, and upper portions of the source and drain electrode patterns contact lower portions of the source and drain electrodes, respectively.