IP Library Patent Application 14144911
Patent Application
App. No. 14/144,911

METHODS AND APPARATUS FOR DISSIPATING HEAT FROM A DIE ASSEMBLY

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Patent No.
US None
App. No.
14/144,911
Abstract

An embodiment of a method facilitates heat dissipation from a die assembly. The method includes removing material from a first side of a die of the die assembly to create a set of recesses in the first side of the die, and depositing a metal-containing layer over the first side of the die to form a heat spreader that contains a set of contours that fill the set of recesses. An embodiment of a die assembly fabricated using the method includes an assembly substrate and a die with a set of recesses formed in a first side of the die. The die assembly also includes an encapsulant formed on the assembly substrate that is absent at least over the set of recesses, and a heat spreader affixed to the first side of the die that includes a set of contours that fill the set of recesses in the die.

Claims (39)

1 . A method for enabling heat dissipation from a die assembly, the method comprising:

removing material from a first side of a die of the die assembly to create a set of recesses in the first side of the die; and

depositing a metal-containing layer over the first side of the die to form a heat spreader that contains a set of contours that fill the set of recesses in the first side of the die.

2 . The method of claim 1 further comprising depositing an intermediate layer, comprising at least one of a barrier layer or a seed layer, between the first side of the die and the metal-containing layer.

3 . The method of claim 2 , wherein:

the barrier layer is deposited on the first side of the die;

the seed layer is deposited on the barrier layer; and

the metal-containing layer is deposited on the seed layer.

4 . The method of claim 1 , wherein the metal-containing layer is deposited over the first side of the die, without having an adhesive layer between the metal-containing layer and the first side of the die.

5 . The method of claim 1 , wherein a first recess of the set of recesses is created in the first side of the die and a first contour of the set contours of the heat spreader fills the first recess in a location over a portion of the die having an elevated operational temperature relative to an average operational temperature over the first side of the die.

6 . The method of claim 1 , wherein the set of recesses in the first side of the die and the set of contours of the heat spreader form a set of channels across the first side of the die in a single direction.

7 . The method of claim 1 , wherein the set of recesses in the first side of the die and the set of contours of the heat spreader form a set of intersecting channels across the first side of the die in multiple directions.

8 . The method of claim 1 , wherein the set of recesses in the first side of the die form a set of pits in the first side of the die.

9 . The method of claim 1 , wherein the set of recesses is created in a backside of the die in a flip-chip configuration, and the first side of the die is the backside of the die.

10 . The method of claim 1 , wherein the set of recesses is created in a topside of the die in an upright-chip configuration, and the first side of the die is the topside of the die.

11 . The method of claim 1 , wherein the die further includes a set of thermal vias, the method further comprising:

exposing, at the first side of the die, at least a portion of the set of thermal vias, wherein the metal-containing layer is deposited over the exposed portion of the thermal vias.

12 . A die assembly, comprising:

an assembly substrate;

a die having a first side and a second opposing side, wherein the die is mounted to the assembly substrate at the second side and a set of recesses is formed in the first side of the die;

an encapsulant formed on the assembly substrate, wherein the encapsulant at least partially embeds the die within the die assembly, and the encapsulant is absent at least over the set of recesses formed in the first side of the die; and

a heat spreader affixed to the first side of the die and configured to conduct heat away from the die, wherein the heat spreader comprises a set of contours that fill the set of recesses formed in the first side of the die.

13 . The die assembly of claim 12 further comprising a first thin film disposed between the first side of the die and the heat spreader, wherein the first thin film is configured to limit diffusion of metal into the die.

14 . The die assembly of claim 13 further comprising a second thin film disposed between the first thin film and the heat spreader, wherein the second thin film is configured to affix the heat spreader to the first side of the die.

15 . The die assembly of claim 12 , wherein the die includes a plurality of thermal vias configured to transfer heat generated within the die to the first side of the die, wherein the plurality of thermal vias are exposed at the first side of the die where the encapsulant is absent.

16 . The die assembly of claim 15 , wherein at least a first portion of the plurality thermal vias have a higher spatial density within a portion of the die that has an elevated operational temperature relative to an average operational temperature of the die.

17 . The die assembly of claim 12 , wherein the set of recesses formed in the first side of the die comprise at least one of:

a set of pits formed in the first side of the die;

a set of channels formed across the first side of the die in a single direction; or

a set of channels formed across the first side of the die in multiple directions.

18 . The die assembly of claim 12 , wherein the die assembly comprises a fan-out wafer level packaging package.

19 . A die assembly, comprising:

an assembly substrate;

a die having a first side and a second opposing side, wherein the die is mounted to the assembly substrate at the second side and a set of recesses is formed in the first side of the die, wherein the die further includes a plurality of thermal vias configured to transfer heat generated within the die to the first side of the die, wherein the plurality of thermal vias are exposed at the first side of the die;

an encapsulant formed on the assembly substrate, wherein the encapsulant at least partially embeds the die within the die assembly, and the encapsulant is absent at least over the set of recesses and over one or more areas where the plurality of thermal vias are exposed at the first side of the die;

a heat spreader affixed to the first side of the die and configured to conduct heat away from the die, wherein the heat spreader comprises a set of contours that fill the set of recesses formed in the first side of the die;

a first thin film disposed between the first side of the die and the heat spreader, wherein the first thin film is configured to limit diffusion of metal into the die; and

a second thin film disposed between the first thin film and the heat spreader, wherein the second thin film is configured to affix the heat spreader to the first side of the die.

20 . The die assembly of claim 19 , wherein at least a portion of the plurality thermal vias has a higher spatial density within a portion of the die that has an elevated operational temperature relative to an average operational temperature of the die.

Assignments (18)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE FILING AND REMOVE APPL. NO. 14085520 REPLACE IT WITH 14086520 PREVIOUSLY RECORDED AT REEL: 037515 FRAME: 0390. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Mar 1, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037926/0642 →
CORRECTIVE ASSIGNMENT OF INCORRECT NUMBER 14085520 PREVIOUSLY RECORDED AT REEL: 037458 FRAME: 0420. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTON OF SECURITY INTEREST IN PATENTS. Recorded Feb 11, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037785/0568 →
CORRECTIVE ASSIGNMENT OF INCORRECT APPL. NO. 14/085,520 PREVIOUSLY RECORDED AT REEL: 037515 FRAME: 0390. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 11, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037792/0227 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT APPL. NO. 14/085,520 PREVIOUSLY RECORDED AT REEL: 037515 FRAME: 0420. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 11, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037879/0581 →
CORRECTIVE ASSIGNMENT OF INCORRECT PATENT APPLICATION NUMBER 14085520 ,PREVIOUSLY RECORDED AT REEL: 037458 FRAME: 0399. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 11, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037785/0454 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME PREVIOUSLY RECORDED ON REEL 037458 FRAME 0420. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Jan 14, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037515/0420 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME PREVIOUSLY RECORDED ON REEL 037458 FRAME 0399. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Jan 14, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037515/0390 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FOUNDING, INC.
Reel/Frame 037458/0399 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FOUNDING, INC.
Reel/Frame 037458/0420 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0790 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 13, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., COLLATERAL AGENT
Reel/Frame 032445/0689 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 13, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 032445/0493 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 13, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 032445/0577 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 28, 2014
From: TANG, JINBANG; YAP, WENG FOONG
To: FREESCALE SEMICONDUCTOR INC.
Reel/Frame 032133/0819 →