Method of manufacturing bonded substrate, bonded substrate, method of manufacturing solid-state imaging apparatus, solid-state imaging apparatus, and camera

1. A method of manufacturing a bonded substrate, comprising:

forming at least one photodiode at a surface of a first side of a first substrate;

forming an insulation layer at the first side of the first substrate, the insulation layer including a plurality of wirings;

forming a first bonding layer on the insulation layer;

forming a second bonding layer on a first surface of a second substrate;

adhering the first bonding layer and the second bonding layer to each other;

applying a heat treatment to the first bonding layer and the second bonding layer such that the first bonding layer and the second bonding layer are bonded to each other; and

thinning the first substrate from a second side of the first substrate to form a semiconductor layer, the second side of the first substrate located at a side opposite to the first side of the first substrate,

wherein,

a surface of at least a part of either one of the first bonding layer and the second bonding layer includes silicon carbonitride,

the at least one photodiode is formed at the surface of the first side of the first substrate before adhering the first bonding layer and the second bonding layer to each other, and

an electronic circuit formed in or on the first substrate is electrically connected to an electronic circuit formed in or on the second substrate.

2. The method of manufacturing the bonded substrate according to claim 1 , wherein:

hydroxyl groups are introduced into the surface of the first bonding layer and the surface of the second bonding layer before adhering the first bonding layer and the second bonding layer to each other; and

the first bonding layer and the second bonding layer are bonded to each other by dehydration condensation during the heat treatment.

3. The method of manufacturing the bonded substrate according to claim 1 , further comprising:

forming a copper-containing layer on at least either one of the first substrate and the second substrate before adhering the first bonding layer and the second bonding layer to each other,

wherein a treating temperature during the heat treatment is not more than 400° C.

4. The method of manufacturing the bonded substrate according to claim 1 , further comprising:

forming an aluminum-containing layer on at least either one of the first substrate and the second substrate before adhering the first bonding layer and the second bonding layer to each other,

wherein a treating temperature during the heat treatment s not more than 500° C.

5. The method of manufacturing the bonded substrate according to claim 1 , further comprising:

forming the electronic circuit in or on at least one of the first substrate and the second substrate before adhering the first bonding layer and the second bonding layer to each other.

6. The method of manufacturing the bonded substrate according to claim 5 , further comprising:

forming the electronic circuit in or on each of the first substrate and the second substrate before adhering the first bonding layer and the second bonding layer to each other.

7. The method of manufacturing the bonded substrate according to claim 1 , further comprising:

forming a first contact penetrating the first bonding layer and connected to the electronic circuit of the first substrate, and forming a second contact penetrating the second bonding layer and connected to the electronic circuit of the second substrate, before adhering the first bonding layer and the second bonding layer to each other,

wherein,

the silicon carbonitride is on a surface of an area, exclusive of areas of the first contact and the second contact, of at least either one of the first bonding layer and the second bonding layer, and

the first contact and the second contact are electrically connected to each other when the first bonding layer and the second bonding layer are adhered to each other.

8. A method of manufacturing a solid-state imaging apparatus, comprising:

forming an electronic circuit having a light-receiving surface and a plurality of photodiodes divided on a surface of a first side of a first substrate;

forming an insulation layer at the first side of the first substrate, the insulation layer including a plurality of wirings;

forming a first bonding layer on the insulation layer;

forming a second bonding layer on a first surface of a second substrate;

adhering the first bonding layer and the second bonding layer to each other;

applying a heat treatment to the first bonding layer and the second bonding layer such that the first bonding layer and the second bonding layer are bonded to each other; and

thinning the first substrate to such an extent that light coming from the first side of the first substrate reaches the light-receiving surface, so as to form a semiconductor layer,

wherein,

silicon carbonitride is formed at a surface of at least a part of either one of the first bonding layer and the second bonding layer,

the plurality of photodiodes is formed before adhering the first bonding layer and the second bonding layer to each other, and

the electronic circuit formed on the first substrate is electrically connected to an electronic circuit formed in or on the second substrate.

9. The method of manufacturing the solid-state imaging apparatus of claim 8 , wherein:

hydroxyl groups are introduced into the surface of the first bonding layer and the surface of the second bonding layer before adhering the first bonding layer and the second bonding layer to each other; and

the first bonding layer and the second bonding layer are bonded to each other by dehydration condensation during the heat treatment.

10. The method of manufacturing the solid-state imaging apparatus of claim 8 , further comprising:

forming a copper-containing layer on at least either one of the first substrate and the second substrate before adhering the first bonding layer and the second bonding layer to each other,

wherein a treating temperature during the heat treatment is not more than 400° C.

11. The method of manufacturing the solid-state imaging apparatus of claim 8 , further comprising:

forming an aluminum-containing layer on at least either one of the first substrate and the second substrate before adhering the first bonding layer and the second bonding layer to each other,

wherein a treating temperature during the heat treatment is not more than 500° C.

12. The method of manufacturing the solid-state imaging apparatus of claim 8 , further comprising:

forming the electronic circuit on at least one of the first substrate and the second substrate before adhering the first bonding layer and the second bonding layer to each other.

13. The method of manufacturing the solid-state imaging apparatus of claim 12 , further comprising:

forming the electronic circuit on each of the first substrate and the second substrate before adhering the first bonding layer and the second bonding layer to each other.

14. The method of manufacturing the solid-state imaging apparatus of claim 8 , further comprising:

forming a first contact penetrating the first bonding layer and connected to the electronic circuit of the first substrate, and forming a second contact penetrating the second bonding layer and connected to the electronic circuit of the second substrate, before adhering the first bonding layer and the second bonding layer to each other, wherein

the silicon carbonitride is formed on a surface of an area, exclusive of areas of the first contact and the second contact, of at least either one of the first bonding layer and the second bonding layer, and

the first contact and the second contact are electrically connected to each other when the first bonding layer and the second bonding layer are adhered to each other.

15. The method of manufacturing the bonded substrate according to claim 1 , wherein the silicon carbonitride is formed at a surface of at least a part of the first bonding layer.

16. The method of manufacturing the bonded substrate according to claim 15 , wherein the silicon carbonitride is formed at a surface of at least a part of the second bonding layer.

17. The method of manufacturing the bonded substrate according to claim 15 , wherein silicon oxide is formed at a surface of at least a part of the second bonding layer.

18. The method of manufacturing the bonded substrate according to claim 1 , wherein a carbon to nitrogen ratio in the silicon carbonitride is 5:5.

19. The method of manufacturing the bonded substrate according to claim 1 , further comprising:

forming the electronic circuit on the first substrate;

forming the electronic circuit on the second substrate; and

connecting the electronic circuit formed on the first substrate to the electronic circuit formed on the second substrate through a contact, wherein the silicon carbonitride is not formed in an area of the contact.