NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors
Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX Y , wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
1. A method for processing a substrate, comprising:
depositing a dielectric material;
depositing a work function material on the dielectric material; and
depositing a metal gate material on the work function material, wherein the work function material is tantalum silicide deposited by reacting at least one metal-halide precursor having the formula MX y with silane precursor, wherein M is tantalum, X is selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
2. The method of claim 1 , wherein the metal gate material is tungsten.
3. The method of claim 1 , wherein M is tantalum.
4. The method of claim 2 , wherein X is fluorine.
5. The method of claim 1 , wherein the work function material is deposited conformally on a feature formed in the dielectric material.
6. The method of claim 1 , wherein the dielectric material has a dielectric constant greater than 10.
7. The method of claim 1 , wherein the work function material is deposited by a plasma-enhanced deposition process.
8. The method of claim 1 , wherein depositing the work function material comprises one or more sequential cycles of:
introducing a metal halide precursor into a processing chamber to form a first layer on the substrate;
purging the metal halide precursor using a purge gas;
introducing a nitrogen free reactive gas including the silane precursor into the processing chamber to form a second layer on the first layer; and purging the nitrogen-free reactive gas using the purge gas.
9. A method for processing a substrate, comprising:
forming a feature in a dielectric material on a substrate; and
depositing a work function material on the feature by:
introducing a first precursor into a processing chamber, the first precursor having a formula MX y , wherein M is tantalum, X is at least one of fluorine, chlorine, bromine, and iodine, and Y is from 3 to 5, introducing a first purge gas into the processing chamber after introducing the first precursor, and introducing a nitrogen-free reactive gas comprising a silane precursor into the processing after introducing the first purge gas.
10. The method of claim 9 , wherein the first precursor is tantalum pentachloride and the nitrogen-free reactive gas is a silane precursor.
11. The method of claim 9 , wherein the nitrogen-free reactive gas does not contain carbon.
12. A method for processing a substrate, comprising: depositing a dielectric material having a dielectric constant greater than 10;
forming a feature in the dielectric material;
depositing a work function material conformally on the feature in the dielectric material; and
depositing a metal gate material on the work function material, wherein the work function material is tantalum silicide deposited by reacting at least one metal-halide precursor having the formula MX y , wherein M is tantalum, X is selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
13. The method of claim 12 , wherein the metal gate material is tungsten.
14. The method of claim 12 , wherein depositing the work function material includes an atomic layer deposition process.
15. The method of claim 12 , wherein the work function material is deposited by a plasma-enhanced deposition process.
16. The method of claim 12 , wherein depositing the work function material comprises one or more sequential cycles of:
introducing a metal halide precursor into a processing chamber to form a first layer on the substrate;
purging the metal halide precursor using a purge gas;
introducing a nitrogen free reactive gas into the processing chamber to form a second layer on the first layer; and
purging the nitrogen-free reactive gas using the purge gas.
17. The method of claim 1 , wherein the at least one metal-halide precursor is reacted with a hydrogen gas.
18. The method of claim 9 , wherein the nitrogen-free reactive gas does not contain a metal.