Semiconductor device having a high frequency external connection electrode positioned within a via hole

1. A semiconductor device comprising:

a substrate;

a via hole that penetrates through the substrate;

a second semiconductor element that is mounted on one side of the substrate;

a first electrode that faces the one side of the substrate and is connected to the via hole, the first electrode provided on a surface of the second semiconductor element;

a first semiconductor element that is stacked above the second semiconductor element;

a second electrode that is provided on the other side of the substrate and electrically connects to the first electrode with the via hole;

wherein the first electrode is positioned on a periphery of the second semiconductor element in a plan view;

the first electrode has a first center axis;

the via hole has a second center axis that is located at a position different from the first center axis in a plan view;

a diameter of the via hole is larger than a diameter of the first electrode; and

the first semiconductor element and the second semiconductor element are integrally sealed by molded resin.

2. The semiconductor device as claimed in claim 1 , wherein the second semiconductor element is electrically connected to the first semiconductor element via a third electrode of the second semiconductor element.

3. The semiconductor device as claimed in claim 1 , wherein the first center axis is positioned within the diameter of the via hole or an area occupied by the via hole in a plan view.

4. The semiconductor device as claimed in claim 1 , further comprising a third semiconductor element that is stacked above the first semiconductor element.

5. The semiconductor device as claimed in claim 1 , wherein:

a plurality of the first electrodes are arranged with a first pitch; and

a plurality of the via holes are arranged with a second pitch that is larger than the first pitch.

6. The semiconductor device as claimed in claim 1 , further comprising:

a third electrode provided on the first semiconductor element;

a wire connecting portion provided on the one side of the substrate;

a wire connected to the third electrode and the wire connecting portion;

a fourth electrode that is electrically connected to the wire connecting portion, the fourth electrode provided on the other side of the substrate;

an upper via hole that is connected to the wire connecting portion, the upper via hole provided in the substrate; and

a lower via hole that is connected to the fourth electrode.

7. The semiconductor device as claimed in claim 6 , wherein the fourth electrode is located nearer to an edge of the substrate than the second electrode.