Light emitting device having light extraction structure and method for manufacturing the same

1. A light emitting device package, comprising:

a light emitting device;

a body comprising:

a top surface on which the light emitting device is disposed;

a bottom surface, a center of the bottom surface downwardly protruding to form a recess at a side of the bottom surface; and

a side surface disposed between the top surface and the bottom surface; and

a lead disposed on the top, side, and bottom surfaces of the body, an end of the lead being disposed on the recess of the body,

wherein a portion of the lead is separated from the side surface of the body to form a gap therebetween, and

wherein the light emitting device comprises:

a semiconductor layer comprising a light emitting layer;

a light extracting structure arranged on the semiconductor layer; and

a reflective electrode disposed under the semiconductor layer, and

wherein a distance between the reflective electrode and a center of the light emitting layer falls within the ranges represented by an odd multiple of λ/(4n)±α, wherein “λ” represents a wavelength of light emitted from the light emitting layer, “n” represents a refractive index of the semiconductor layer, and “α” represents 0.14 λ/n.

2. The light emitting device package according to claim 1 , wherein the light extracting structure is formed on the semiconductor layer.

3. The light emitting device package according to claim 2 , wherein the light extraction structure is formed by etching the semiconductor layer.

4. The light emitting device package according to claim 1 , wherein the reflective electrode is located over a support layer made of a semiconductor or a metal.

5. The light emitting device package according to claim 1 , wherein the light extracting structure comprises holes or rods formed on the semiconductor layer.

6. The light emitting device package according to claim 5 , wherein the holes have a depth of 300 to 3,000 nm, and the rods have a height of 300 to 3,000 nm.

7. The light emitting device package according to claim 6 , wherein the holes or rods have a diameter of 0.25a to 0.45a where “a” represents an average periodicity of the light extraction structure.

8. The light emitting device package according to claim 1 , wherein the light extracting structure comprises the same material as that of the semiconductor layer.

9. The light emitting device package according to claim 1 , wherein the reflective electrode comprises an ohmic electrode.

10. The light emitting device package according to claim 1 , wherein the reflective electrode has a reflectance of 50% or more.

11. The light emitting device package according to claim 1 , wherein the light emitting layer has a thickness of 0.05λ/n to 0.25λ/n.

12. The light emitting device package according to claim 1 , wherein the light extraction structure has an average periodicity of 0.8 μm to 5 μm.

13. The light emitting device package according to claim 1 , wherein the light emitting device further comprises:

an ohmic electrode between the reflective electrode and the semiconductor layer.

14. The light emitting device package according to claim 13 , wherein the ohmic electrode comprises a transparent electrode.

15. The light emitting device package according to claim 1 , wherein a p-type semiconductor layer is arranged between the reflective electrode and the light emitting layer.

16. The light emitting device package according to claim 1 , wherein the distance between the reflective electrode and the center of the light emitting layer is in the range of 0.19λ/n to 0.38λ/n or 0.65λ/n to 0.93λ/n, where “λ” represents a wavelength of light emitted from the light emitting layer and “n” represents a refractive index of the semiconductor layer.