IP Library Granted Patent US 9,269,522
Granted Patent B2
US 9,269,522 · App. 14/152,045 · Granted Feb 23, 2016

Electric field emitting source, element using same, and production method therefor

Inventors: Cheol Jin Lee (Seoul, KR); Dong Hoon Shin (Seoul, KR); Ji Hong Shin (Seoul, KR)
Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
H01J19/24H01J1/304H01J3/021H01J9/025
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Quick Facts
Patent No.
US 9,269,522
App. No.
14/152,045
Granted
Feb 23, 2016
Kind
B2
Abstract

An electric field emitting source is equipped with an electron emitting film which comprises a nano-sized electron emitting substance and has a first surface and a second surface constituting the surface opposite thereto, and a cathode which secures one end of the electron emitting film and comprises a first block and a second block respectively corresponding to the first surface and the second surface of the electron emitting film.

Claims (39)

1. A field emission device comprising:

an electron emission film containing nano-sized electron emission materials and having a first surface and a second surface opposite to the first surface;

a cathode comprising a first block and a second block corresponding to the first surface and the second surface of the electron emission film, respectively, to fix one end of the electron emission film;

a substrate that supports the cathode;

an anode formed on the other side of the substrate, facing to the electron emission film; and

a gate formed between the cathode and the anode;

wherein an overlap area of the first block for the electron emission film corresponds to that of the second block for the electron emission film,

the overlap areas correspond to only the one end of the electron emission film, and

the cathode, the anode and the gate are located in a same surface of the substrate.

2. The field emission device of claim 1 ,

wherein an end of the electron emission film is positioned facing to one side surface of the anode.

3. The field emission device of claim 2 ,

wherein the gate comprises gate members provided at both sides of an electron passageway between the electron emission film and the anode.

4. The field emission device of claim 2 ,

wherein the gate comprises a surface positioned at a lower portion of the electron passageway between the electron emission film and the anode.

5. The field emission device of claim 2 ,

wherein the cathode is provided on both ends of the field emission film.

6. The field emission device of claim 2 ,

wherein the electron emission materials of the electron emission film are combined to one another through a molecular force without requiring a binder.

7. The field emission device of claim 3 ,

wherein the electron emission materials of the electron emission film are combined to one another through a molecular force without requiring a binder.

8. The field emission device of claim 4 ,

wherein the electron emission materials of the electron emission film are combined to one another through a molecular force without requiring a binder.

9. The field emission device of claim 5 ,

wherein the electron emission materials of the electron emission film are combined to one another through a molecular force without requiring a binder.

10. A method for fabricating a field emission device, the method comprising:

forming a first block, which is an element of a cathode, on one side of a substrate;

forming a sacrificial layer having a surface with the same height as that of the first block on a part, in which the first block is not formed;

forming an electron emission film by using electron emission materials on a surface of the first block and a surface of the sacrificial layer;

forming a second block corresponding to the first block on the electron emission film; and

removing the sacrificial layer so that the electron emission film has a gap from the substrate, and fixing an end of the electron emission film in the state that it is inserted between the first and second blocks,

wherein the forming the first block forms a first anode together on a position spaced from the first block,

the forming the sacrificial layer forms the sacrificial layer on an area between the first block and the first anode, and

the forming the electron emission film forms the electron emission film on a top surface of the first block, the first anode and the sacrificial layer.

11. The method for fabricating a field emission device as claimed in claim 10 ,

wherein the method further comprises:

after the step of forming the second block and before the step of removing the sacrificial layer,

separating the electron emission film from the first anode layer by processing the electron emission film; and

forming a second anode layer having a height corresponding to the second block for fabricating a field emission device as claimed in claim 10 , on the first anode.

Assignments (3)
CHANGE OF NAME Recorded Nov 4, 2025
From: LUMINAX CO., LTD.
To: LMX CO., LTD.
Reel/Frame 073150/0750 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2023
From: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
To: LUMINAX CO., LTD.
Reel/Frame 063300/0299 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2014
From: LEE, CHEOL JIN; SHIN, DONG HOON; SHIN, JI HONG
To: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
Reel/Frame 031940/0187 →
Priority Claims (1)
KR 10-2011-0068553 · Jul 11, 2011 · national
Continuity (2)
Continuation PCTKR2012005480 · Jul 11, 2012
Related Publication 20140191650A1 · Jul 10, 2014