Structures, methods and applications for electrical pulse anneal processes
Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.
1. A method of annealing, comprising: applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ body diode structure for a plurality of nanoseconds,
wherein the ESD N+/P+ body diode structure comprises: an N+ diffusion; a P+ diffusion; and an active device between and directly contacting each of the N+ diffusion and the P+ diffusion;
the applying the electrical pulse causes heating of the ESD N+/P+ body diode structure, and the heating anneals the active device;
the plurality of nanoseconds is about 100 nanoseconds to about 500 nanoseconds; and
a current of the electrical pulse is about 2.5 milliamps to about 250 milliamps.
2. The method of claim 1 , wherein the current of the electrical pulse is about 250 milliamps.
3. The method of claim 1 , wherein the current of the electrical pulse is about 25 milliamps.
4. The method of claim 1 , wherein the current of the electrical pulse is about 2.5 milliamps.
5. The method of claim 1 , wherein the applying the electrical pulse causes heating of the ESD N+/P+ body diode structure that causes a peak temperature of about 1200° K.
6. The method of claim 1 , wherein the annealing is performed over an area of about 50 μm 2 to 100 μm 2 .
7. The method of claim 1 , wherein a temperature of the annealing is substantially constant over a cross section of an area to be annealed.
8. The method of claim 1 , wherein the electrical pulse is applied across at least an N+ diffusion and a P+ diffusion of the ESD N+/P+ body diode structure.
9. The method of claim 1 , wherein the active device comprises a circuit for one of a phase locked loop, a ring oscillator, and a voltage controlled oscillator.
10. The method of claim 1 , wherein each of the N+ diffusion, the P+ diffusion, and the active device are directly on a buried oxide layer.
11. The method of claim 1 , wherein the active device is in electrical contact with each of the N+ diffusion and the P+ diffusion.
12. The method of claim 1 , further comprising using the N+ diffusion as a cathode and the P+ diffusion as an anode for the applying the electrical pulse.
13. The method of claim 1 , further comprising applying the electrical pulse using a first contact in electrical contact with the P+ diffusion and a second contact in contact with the N+ diffusion.