Cut last self-aligned litho-etch patterning
The present disclosure relates to a method of performing a self-aligned litho-etch (SALE) process. In some embodiments, the method is performed by forming a spacer material over a substrate having a multi-layer hard mask with a first layer and an underlying second layer to provide a first cut layer, and forming a reverse material over the spacer material to form a second cut layer. A second plurality of openings, cut according to the second cut layer, are formed to expose the second layer at a positions corresponding to a second plurality of shapes of a SALE design layer. A first plurality of openings, cut according to the first cut layer, are formed to expose the second layer at a positions corresponding to a first plurality of shapes of the SALE design layer. The second layer is etched according to the first and second plurality of openings.
1. A method of performing a self-aligned litho-etch (SALE) process, comprising:
forming a spacer material over a substrate comprising a multi-layer hard mask having a first layer and an underlying second layer to provide a first cut layer comprising the spacer material at a first cut position;
forming a reverse material over the spacer material to form a second cut layer comprising the reverse material at a second cut position over the substrate;
forming a second plurality of openings, cut according to the second cut layer, to expose the second layer at a second plurality of positions corresponding to a second plurality of shapes of a SALE design layer;
forming a first plurality of openings, cut according to the first cut layer, to expose the second layer at a first plurality of positions corresponding to a first plurality of shapes of the SALE design layer; and
etching the second layer according to the first plurality of openings and the second plurality of openings.
2. The method of claim 1 , wherein the forming the first cut layer comprises:
forming a first cut layer opening within the first layer of the multi-layer hard mask; and
depositing the spacer material over the substrate so that the spacer material fills the first cut layer opening.
3. The method of claim 2 , wherein forming the second cut layer comprises:
depositing a second pattern transfer layer over the spacer material;
selectively etching the second pattern transfer layer to form an opening at the second cut position that extends from a top surface of the second pattern transfer layer to the spacer material; and
depositing the reverse material into the opening.
4. The method of claim 3 , further comprising:
etching the spacer material not covered by the reverse material to form the second plurality of openings.
5. The method of claim 3 , further comprising:
etching the first layer of the multi-layer hard mask according to a third masking layer and the spacer material to form the first plurality of openings.
6. The method of claim 1 , wherein the reverse material comprises an oxide or a nitride.
7. The method of claim 1 , wherein the reverse material has an etching selectivity of greater than 6 with respect to the spacer material.
8. The method of claim 1 , wherein the reverse material comprises silicon and has an etching selectivity of greater than 6 with respect to a titanium oxide or a titanium nitride of the spacer material.
9. The method of claim 1 ,
wherein the first layer of the multi-layer hard mask comprises a silicon layer; and
wherein the second layer of the multi-layer hard mask comprises a TEOS (tetraethyl orthosilicate) layer abutting the silicon layer.
10. The method of claim 1 ,
wherein the first cut layer is configured to provide for a first end-to-end space between one or more of the first plurality of shapes;
wherein the second cut layer is configured to provide for a second end-to-end space between one or more of the second plurality of shapes; and
wherein a ratio of the first end-to-end space to the second end-to-end space is approximately 1 to 1.
11. A method of performing a self-aligned litho-etch (SALE) process, comprising:
providing a substrate comprising a tri-layer hard mask having an upper-layer and an underlying central-layer overlying a semiconductor body;
forming a first cut layer opening within the upper-layer;
depositing a spacer material over the substrate so that the spacer material fills the first cut layer opening to form a first cut layer;
forming a second cut layer by depositing a reverse material at a second cut position over the spacer material and by selectively etching the spacer material not covered by the reverse material to form a second plurality of openings, cut according to the second cut layer, that expose the central-layer at a second plurality of positions corresponding to a second plurality of shapes of a SALE design layer;
forming a first plurality of openings, cut according to the first cut layer, that expose the central-layer at a first plurality of positions corresponding to a first plurality of shapes of the SALE design layer; and
etching the central-layer according to the first plurality of openings and the second plurality of openings.
12. The method of claim 11 , wherein the reverse material comprises an oxide or a nitride.
13. The method of claim 11 , wherein the reverse material comprises silicon and has an etching selectivity of greater than 6 with respect to titanium oxide or titanium nitride.
14. The method of claim 11 , wherein the forming the second cut layer comprises:
depositing a second pattern transfer layer over the spacer material;
selectively etching the second pattern transfer layer to form an opening at the second cut position that extends from a top surface of the second pattern transfer layer to the spacer material; and
depositing the reverse material into the opening.
15. The method of claim 14 , further comprising:
etching the spacer material not covered by reverse material to form the second plurality of openings.
16. The method of claim 11 , further comprising:
etching the upper-layer of the tri-layer hard mask according to a masking layer and the spacer material to form the first plurality of openings.
17. The method of claim 11 ,
wherein the upper-layer of the tri-layer hard mask comprises a silicon layer; and
wherein the central-layer of the tri-layer hard mask comprises a TEOS (tetraethyl orthosilicate) layer abutting the silicon layer.
18. The method of claim 11 ,
wherein the first cut layer is configured to provide for a first end-to-end space between one or more of the first plurality of shapes;
wherein the second cut layer is configured to provide for a second end-to-end space between one or more of the second plurality of shapes; and
wherein a ratio of the first end-to-end space to the second end-to-end space is approximately 1 to 1.
19. A method of performing a self-aligned litho-etch (SALE) process, comprising:
forming a first masking layer having a plurality of openings over a substrate;
forming a spacer material over the first masking layer and within the plurality of openings, wherein the spacer material defines a first cut layer;
forming a second cut layer onto the spacer material at a location over one of the plurality of openings in the first masking layer;
removing the spacer material from lateral surfaces to form a second plurality of openings that are cut according to the second cut layer, wherein the second plurality of openings expose a second masking layer underlying the first masking layer;
forming a first plurality of openings extending through the first masking layer to expose the second masking layer, which are cut according to the first cut layer; and
etching the second masking layer according to the first plurality of openings and the second plurality of openings.
20. The method of claim 19 ,
forming a first cut layer opening within the first masking layer; and depositing the spacer material over the substrate so that the spacer material is formed to a height greater than or equal to a height of the first masking layer within the first cut layer opening.