IP Library Granted Patent US 9,245,735
Granted Patent B2
US 9,245,735 · App. 14/155,089 · Granted Jan 26, 2016

Upper electrode device

Inventor: Hsiuchi Hsu (Shanghai, CN)
Assignee: EVERDISPLAY OPTRONICS (SHANGHAI) LIMITED
H01L21/00Y10T137/85938
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Quick Facts
Patent No.
US 9,245,735
App. No.
14/155,089
Granted
Jan 26, 2016
Kind
B2
Abstract

An upper electrode device applied to the film coating process has a splitter chamber and at least three gas diversion plates; a gas inlet is set on the splitter chamber; the at least three gas diversion plates were fixed on the inside walls of the splitter chamber and used for diverting and outputting the gas introduced into the splitter chamber through the gas inlet. By using the upper electrode device provided by the present disclosure can uniformize the gas used for coating in the film coating process, especially uniformize the gas in the perimeter area and the center area. Consequently, the uniformity of the thickness of the whole film coated is improved.

Claims (20)

1. An upper electrode device, comprising:

a splitter chamber provided with a gas inlet; and

at least three gas diversion plates fixed on inside walls of the splitter chamber for diverting and outputting the gas introduced into the splitter chamber through the gas inlet;

wherein a plurality of blowholes is set on each gas diversion plate, and the bore diameter of the blowholes on the same gas diversion plate are the same;

wherein the at least three gas diversion plates comprise a top gas diversion plate, a bottom gas diversion plate and at least one middle gas diversion plate;

the gas introduced into the splitter chamber through the gas inlet diverted through the top gas diversion plate, the middle gas diversion plate and the bottom gas diversion plate in sequence; the gas gets out of the splitter chamber through the bottom gas diversion plate;

wherein a plurality of blowholes on the top gas diversion plate is distributed on the top gas diversion plate;

a plurality of blowholes on each middle gas diversion plate are distributed on the middle gas diversion plate;

the density of the blowholes on the bottom gas diversion plate gradually increases in direction from the geometrical center of the bottom gas diversion plate to its edge;

wherein the bottom gas diversion plate comprises a center area and a perimeter area: the density of the blowholes in the perimeter area is 1.1 to 1.2 times the density of the blowholes in the center area;

wherein the perimeter area is the area within a distance of lower than 50 mm to the edge of the bottom gas diversion plate.

2. The upper electrode device as claimed in claim 1 , wherein the gas inlet is set on the top of the splitter chamber;

the gas diversion plate is set below the gas inlet, and each gas diversion plate is parallel to the top surface of the splitter chamber.

3. The upper electrode device as claimed in claim 2 , wherein two gas diversion plates adjacent to each other and the inside walls between the two gas diversion plates together constitute a unit chamber;

the gas exchanged from a unit chamber to an adjacent unit chamber through the blowholes.

4. The upper electrode device as claimed in claim 2 , wherein the bore diameters of the blowholes on each gas diversion plate are larger than the bore diameters of the blowholes on the gas diversion plates below.

5. The upper electrode device as claimed in claim 1 , wherein the blowholes set on the gas diversion plates adjacent to each other are vertically, refer to the direction of the surface of the gas diversion plate, staggered.

6. The upper electrode device as claimed in claim 1 , wherein the bore diameter of the blowholes on the top gas diversion plate ranges from 5 mm to 10 mm.

7. The upper electrode device as claimed in claim 1 , wherein the bore diameter of the blowholes on the bottom gas diversion plate ranges from 0.2 mm to 0.6 mm.

8. The upper electrode device as claimed in claim 1 , wherein the blowholes are extending through the upper surface and lower surface of each gas diversion plate.

Assignments (2)
CHANGE OF NAME Recorded Aug 4, 2020
From: EVERDISPLAY OPTRONICS (SHANGHAI) LIMITED
To: EVERDISPLAY OPTRONICS (SHANGHAI) CO., LTD.
Reel/Frame 053395/0865 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2014
From: HSU, HSIUCHI
To: EVERDISPLAY OPTRONICS (SHANGHAI) LIMITED
Reel/Frame 031966/0932 →
Priority Claims (1)
CN 2013 1 0229521 · Jun 8, 2013 · national
Continuity (1)
Related Publication 20140360601A1 · Dec 11, 2014