Semiconductor device and process for fabricating the same
View Patent ↗A thin stacked semiconductor device has a plurality of circuits that are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiring part, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, and the other surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode. A second insulating layer if formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, and bump electrodes are formed on both electrodes.
1. A stacked semiconductor device comprising a first semiconductor device and a second semiconductor device secured on the first semiconductor device,
the first semiconductor device comprising:
a first semiconductor substrate;
a first circuit element formed at one main surface of the first semiconductor substrate;
a wiring portion connected with the first circuit element and formed at the one main surface of the first semiconductor substrate;
a post electrode that is connected with the wiring portion, and that is formed so as to protrude from the first semiconductor substrate; and
a first through-type electrode formed in a first through hole penetrating through the first semiconductor substrate in a thickness direction, and
the second semiconductor device comprising:
a second semiconductor substrate;
a second circuit element formed at one main surface of the second semiconductor substrate; and
a second through-type electrode formed in a second through hole penetrating through the second semiconductor substrate in a thickness direction, connected with the second circuit element at the one main surface of the second semiconductor substrate, and connected with the post electrode at an other main surface of the second semiconductor substrate, wherein
an area corresponding to an opening of the second through hole formed at the other main surface of the second semiconductor substrate is smaller than an area corresponding to a top surface of the post electrode, and the post electrode and the second through-type electrode are connected to each other via a solder terminal.
2. The stacked semiconductor device according to claim 1 , wherein the first through-type electrode is provided at a location corresponding to the post electrode.
3. The stacked semiconductor device according to claim 1 , wherein the first semiconductor device and the second semiconductor device are a same size, and overlap each other in corresponding fashion.
4. The stacked semiconductor device according to claim 1 , wherein a plurality of the second semiconductor devices smaller than the first semiconductor device are secured on the first semiconductor device.
5. A stacked semiconductor device comprising a first semiconductor device and a second semiconductor device secured on the first semiconductor device,
the first semiconductor device comprising:
a first semiconductor substrate;
a first circuit element formed at one main surface of the first semiconductor substrate;
a wiring portion connected with the first circuit element and formed at the one main surface of the first semiconductor substrate;
a first post electrode connected with the wiring portion; and
a first through-type electrode formed in a first through hole penetrating through the first semiconductor substrate in a thickness direction, and
the second semiconductor device comprising:
a second semiconductor substrate;
a second circuit element formed at one main surface of the second semiconductor substrate, and the one main surface of the second semiconductor substrate facing the one main surface of the first semiconductor substrate;
a second post electrode connected with the second circuit element and the first post electrode, wherein
an area corresponding to a top surface of the second post electrode is smaller than an area corresponding to a top surface of the first post electrode.
6. The stacked semiconductor device according to claim 5 , wherein the first through-type electrode is provided at a location corresponding to the first post electrode.
7. The stacked semiconductor device according to claim 5 , wherein the first post electrode and the second post electrode are connected to each other via a protruding electrode.
8. The stacked semiconductor device according to claim 5 , wherein the first semiconductor device and the second semiconductor device are a same size, and overlap each other in corresponding fashion.
9. The stacked semiconductor device according to claim 5 , wherein a plurality of the second semiconductor devices smaller than the first semiconductor device are secured on the first semiconductor device.