Semiconductor device and manufacturing method of the same
View Patent ↗A semiconductor package includes a semiconductor chip, a protruding pillar electrode provided on the semiconductor chip, and resin covering the semiconductor chip and the pillar electrode. The resin has a concave part and exposes a front edge portion of the pillar electrode from the resin at the bottom face of the concave part. The front edge portion of the pillar electrode is exposed from the concave part of the resin, which makes it possible to suppress increase in the height of the pillar electrode and to form the pillar electrodes having fine patterns or a narrow pitch.
1. A semiconductor device, comprising:
a first substrate;
resin that covers the first substrate;
a concave part provided in the resin; and
a first electrode with a protruding shape, that is provided on the first substrate and includes a part exposed from the resin at a bottom face of the concave part; wherein
the resin includes a part different from the concave part,
the first electrode is located at an inner position than a side wall of the concave part, and
an upper surface of the first electrode is located at a lower position than an upper surface of the part different from the concave part of the resin.
2. The semiconductor device according to claim 1 , wherein the first electrode includes:
a first part that includes a first conductor; and
a second part that is located on the first part and includes a second conductor different from the first conductor.
3. The semiconductor device according to claim 2 , wherein the part exposed from the resin is the second part, and
the first part is covered by the resin.
4. The semiconductor device according to claim 2 , wherein the first conductor includes copper and the second conductor includes solder.
5. The semiconductor device according to claim 1 , further comprising:
a pad provided on the first substrate;
a lead frame, that is partially provided within the resin; and
a wire that is provided within the resin, the wire including one end connected to the pad and another end connected to the lead frame and being partially located at a higher position than the bottom face of the concave part.
6. The semiconductor device according to claim 1 , further comprising:
a pad provided on the first substrate;
a lead frame, that is partially provided within the resin; and
a wire that is provided within the resin, the wire including one end connected to the pad and another end connected to the lead frame and being partially located at a higher position than the first electrode.
7. The semiconductor device according to claim 1 , further comprising:
a second substrate, and
a second electrode that is provided on the second substrate and connected to the first electrode within the concave part.
8. The semiconductor device according to claim 7 , further comprising an insulating layer, that covers the first electrode and the second electrode, provided in the concave part,
wherein the second electrode has a protruding shape.
9. The semiconductor device according to claim 7 ,
wherein the second substrate is smaller than the concave part in a plan view, and
wherein a face of the second substrate where the second electrode is provided is located between an upper end and the bottom face of the concave part in the resin.
10. The semiconductor device according to claim 1 , comprising a groove which is provided in the resin and communicated with the concave part.
11. The semiconductor device according to claim 1 , wherein the upper surface of the first electrode is located at a higher position than the bottom face of the concave part.