Semiconductor element manufacturing method
There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0<Z<L=8×10 −6 ×T 3 −0.0092×T 2 +3.6×T−468±0.1 is satisfied.
1. A method of manufacturing a semiconductor element, the method comprising:
a first step of forming a semiconductor film of which a principal constituent is an oxide semiconductor;
after the first step, a second step of forming a first insulation film on a surface of the semiconductor film;
after the second step, a third step of applying a heat treatment in an oxidizing atmosphere; and,
after the third step, a fourth step of forming a second insulation film on a surface of the first insulation film,
wherein, during the second step and the third step, a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0<Z<L=8×10 −6 ×T 3 −0.0092×T 2 +3.6×T−468±0.1 is satisfied, and
further comprising, after the fourth step, a fifth step of applying a heat treatment in an oxidizing atmosphere at a lower temperature than the heat treatment temperature of the third step.
2. The method according to claim 1 wherein, during the second step and the third step, the thickness of the first insulation film and the heat treatment temperature are adjusted such that the relational expression Z≦L−1.0 is satisfied.
3. The method according to claim 2 , wherein, during the second step and the third step, the thickness of the first insulation film and the heat treatment temperature are adjusted such that the relational expression Z≦L−2.0 is satisfied.
4. The method according to claim 1 , wherein, during the second step and the third step, the thickness of the first insulation film and the heat treatment temperature are adjusted such that the relational expression L−5.0≦Z is satisfied.
5. The method according to claim 1 , wherein, during the second step and the third step, the thickness of the first insulation film and the heat treatment temperature are adjusted such that the relational expression L−2.0≦Z is satisfied.
6. The method according to claim 1 , wherein, during the second step, the thickness Z of the first insulation film is adjusted to be at least 2 nm.
7. The method according to claim 1 , wherein, during the second step and the fourth step, the first insulation film and the second insulation film are formed using a film formation technique that produces plasma.
8. The method according to claim 7 , wherein, in the second step:
a film formation rate is lower and a plasma potential is lower than in the film formation of the fourth step, or
a film formation pressure is higher than in the film formation of the fourth step, or
a combination thereof.
9. The method according to claim 7 , wherein, in the second step, the first insulation film is formed at a film formation rate of 20 nm/minute or less.
10. The method according to claim 7 , wherein, in the second step, the first insulation film is formed in a film formation duration that is shorter than a film formation duration in which the second insulation film is formed in the fourth step.
11. The method according to claim 1 , wherein, in the first step, the thickness of the semiconductor film is formed to be at least 5 nm.
12. The method according to claim 1 , wherein the temperature of the heat treatment of the fifth step is at least 100° C.
13. The method according to claim 12 , wherein the temperature of the heat treatment of the fifth step is at least 300° C.
14. The method according to claim 1 , wherein, in the fourth step, the second insulation film is formed with a greater thickness than the first insulation film.
15. The method according to claim 1 , wherein the oxide semiconductor is a non-crystalline oxide including at least one of indium, gallium or zinc.
16. The method according to claim 1 , wherein the heat treatment temperature in the third step is less than 600° C.
17. The method according to claim 1 , wherein, in the second step, the first insulation film is formed on the entire surface of the semiconductor film.
18. The method according to claim 1 , wherein:
a constituent material of the second insulation film includes a metal, and
the first insulation film includes both at least one metal portion of the constituent material of the second insulation film and at least one metal portion of a constituent material of the semiconductor film.
19. A method of manufacturing a field effect transistor, the method comprising:
an electrode formation step of forming a gate electrode, a source electrode and a drain electrode; and
before or during the electrode formation step, a non-electrode formation step of, using the semiconductor element manufacturing method according to claim 1 , forming
the semiconductor film, which serves as an active layer, and
the first insulation film and the second insulation film, which serve as a protective layer of the semiconductor film, a gate insulation layer or a combination thereof.
20. The method according to claim 19 , wherein the electrode formation step and the non-electrode formation step are carried out in a sequence such that the gate electrode is of a bottom gate type, and the first insulation film and the second insulation film are formed to serve as the protective layer of the semiconductor film.
21. The method according to claim 20 , wherein a total thickness of the first insulation film and the second insulation film is at least 30 nm.
22. The method according to claim 19 , wherein the formation of the source electrode and the drain electrode in the electrode formation step is carried out between the first step and the second step such that the source electrode and the drain electrode are of a top contact type, and
a thickness of the source electrode and the drain electrode and the heat treatment temperature are adjusted such that, if the thickness of the source electrode and the drain electrode is represented by Y, the relational expression 0<Y<L=8×10 −6 ×T 3 −0.0092×T 2 +3.6×T−468±0.1 is satisfied.
23. The method according to claim 19 , wherein the formation of the source electrode and the drain electrode in the electrode formation step is carried out before the first step such that the source electrode and the drain electrode are of a bottom contact type.