Integrated magnetic core inductors with interleaved windings
A coupled inductor topology for a thin-film magnetic core power inductor that enables efficient integrated power conversion. Coupled magnetic core inductors with interleaved windings inductors comprise magnetic films and partially or fully interleaved conductors. Methods described herein are suitable for integration into monolithic, chip stacking fabrication or other traditional semiconductor device fabrication techniques and equipment. Soft ferromagnetic materials exhibiting high permeability and low coercivity are deposited using thin-film techniques. A plurality of electrical conductors surround at least one ferromagnetic core giving rise to two or more windings. Windings are coupled to one another through magnetic core(s). Windings are used to control permeability, inductance and magnetic saturation, finding particular utility in high magnetic flux applications.
1. An integrated circuit comprising:
a first ferromagnetic core constructed in a semiconductor device of said integrated circuit;
a second ferromagnetic core constructed in said semiconductor device;
a first winding wrapped around said first and second ferromagnetic cores; and
a second winding wrapped around said first and second ferromagnetic cores;
said first winding and said second winding being integrally constructed with said respective ferromagnetic cores,
said first winding and said second winding configured to be inversely magnetically coupled to one another such that a first magnetic field induced by the first winding is opposite in polarity to a second magnetic field induced by the second winding, wherein the second magnetic field at least partially cancels the first magnetic field.
2. The integrated circuit of claim 1 , wherein said first and second windings are at least partially interleaved with one another.
3. The integrated circuit of claim 1 , wherein said first and second ferromagnetic cores substantially define a multilateral frame shape.
4. The integrated circuit of claim 1 , wherein said first and second ferromagnetic cores substantially define an oval shape.
5. The integrated circuit of claim 1 , wherein said first ferromagnetic core is substantially quadrilateral shaped.
6. The integrated circuit of claim 1 , further comprising a plurality of more than two windings.
7. The integrated circuit of claim 1 , wherein said first and second ferromagnetic cores comprise thin-films.
8. The integrated circuit of claim 7 , wherein said first and second ferromagnetic cores further comprise laminated layers.
9. The integrated circuit of claim 8 , wherein said first and second ferromagnetic cores further comprise alternating insulating layers, interspersed therebetween.
10. The integrated circuit of claim 1 , wherein said first and second ferromagnetic cores are substantially rectangular in shape.
11. The integrated circuit of claim 1 , wherein said first and second ferromagnetic cores further comprise a magnetically anisotropic material.
12. The integrated circuit of claim 11 , wherein a hard axis of said magnetically anisotropic material is oriented to be at least partially magnetized by said first and second windings.
13. The integrated circuit of claim 1 , wherein a thickness of said first and second ferromagnetic cores range between 1 and 10 μm in thickness.
14. The integrated circuit of claim 1 , wherein the circuit is monolithically fabricated.
15. The integrated circuit of claim 1 , wherein the circuit is fabricated using chip stacking technology.
16. The integrated circuit of claim 1 , wherein the first and second magnetic fields form a single flux path.
17. The integrated circuit of claim 1 , wherein a first DC component of a first signal passing through the first winding is equal and opposite to a second DC component of a second signal passing through the second winding.