Semiconductor module having heat dissipating portion

1. A semiconductor module comprising:

a control board having a surface;

a shield plate arranged opposing the control board, the shield plate having a first surface opposing the surface of the control board, the surface of the control board and the first surface of the shield plate being parallel to each other;

a first heat dissipating portion that is made of metal, the first heat dissipating portion being provided on the surface of the control board, the first heat dissipating portion having a plurality of first radiation fins, and the plurality of first radiation fins extending from the surface of the control board to the shield plate;

a second heat dissipating portion that is made of metal, the second heat dissipating portion being provided on the first surface of the shield plate, the second heat dissipating portion having a plurality of second radiation fins, and the plurality of second radiation fins extending from the first surface of the shield plate toward the control board; and

a dielectric body that is arranged between the first heat dissipating portion and the second heat dissipating portion,

wherein the first radiation fins and the second radiation fins are alternately arranged in a direction parallel to the first surface.

2. The semiconductor module according to claim 1 , wherein

the second heat dissipating portion provided on the shield plate includes side surfaces of a quadrangular prism that extends from the shield plate toward the control board;

the dielectric body is arranged directly contacting the first heat dissipating portion and the second heat dissipating portion, on an inside of the side surfaces of the quadrangular prism; and

the dielectric body, a contact portion of the first heat dissipating portion that contacts the dielectric body, a contact portion of the second heat dissipating portion that contacts the dielectric body, and the side surfaces of the quadrangular prism form a capacitor.

3. The semiconductor module according to claim 2 , wherein the side surfaces of the quadrangular prism is arranged between the plurality of first radiation fins, in a direction parallel to the first surface.

4. The semiconductor module according to claim 1 , wherein

the first heat dissipating portion provided on the control board includes side surfaces of a quadrangular prism that extends from the control board toward the shield plate;

the dielectric body is arranged directly contacting the first heat dissipating portion and the second heat dissipating portion, on an inside of the side surfaces of the quadrangular prism; and

the dielectric body, a contact portion of the first heat dissipating portion that contacts the dielectric body, a contact portion of the second heat dissipating portion that contacts the dielectric body, and the side surfaces of the quadrangular prism form a capacitor.

5. The semiconductor module according to claim 4 , wherein the side surfaces of the quadrangular prism is arranged between the plurality of second radiation fins, in a direction parallel to the first surface.

6. The semiconductor module according to claim 1 , further comprising

a screw that passes through the control board and the first heat dissipating portion, wherein

the second heat dissipating portion provided on the shield plate includes side surfaces of a quadrangular prism that extends from the shield plate toward the control board;

the dielectric body is arranged directly contacting the second heat dissipating portion, on an inside of the side surfaces of the quadrangular prism;

the dielectric body and the first heat dissipating portion are separated from each other so as to be electrically insulated;

the first heat dissipating portion and the dielectric body are electrically connected by the screw; and

the dielectric body, the screw, and the side surfaces of the quadrangular prism form a capacitor.

7. The semiconductor module according to claim 1 , wherein

the second heat dissipating portion provided on the shield plate includes side surfaces of a quadrangular prism that extends from the shield plate toward the control board;

the dielectric body is arranged directly contacting the second heat dissipating portion, on an inside of the side surfaces of the quadrangular prism;

the first radiation fins include a radiation fin that directly contacts the dielectric body; and

the dielectric body, the radiation fin that directly contacts the dielectric body, and the side surfaces of the quadrangular prism form a capacitor.

8. The semiconductor module according to claim 1 , wherein

a space is formed by the first radiation fins and the second radiation fins.

9. The semiconductor module according to claim 8 , wherein

the first radiation fins and the second radiation fins are separated from each other so as to be electrically insulated.

10. The semiconductor module according to claim 1 , wherein

a module equipped with an insulated gate bipolar transistor is arranged on a second surface of the shield plate.

11. The semiconductor module according to claim 10 , wherein

the module equipped with the insulated gate bipolar transistor is cooled with coolant.

12. The semiconductor module according to claim 1 , wherein the dielectric body is an alumina plate.

13. A semiconductor module comprising:

a control board having a surface;

a shield plate arranged opposing the control board, the shield plate having a first surface opposing the surface of the control board, the surface of the control board and the first surface of the shield plate being parallel to each other;

a first heat dissipating portion that is made of metal, the first heat dissipating portion being provided on the surface of the control board, the first heat dissipating portion having a plurality of first radiation fins, and the plurality of first radiation fins extending from the surface of the control board to the shield plate;

a second heat dissipating portion that is made of metal, the second heat dissipating portion being provided on the first surface of the shield plate, the second heat dissipating portion having a plurality of second radiation fins, and the plurality of second radiation fins extending from the first surface of the shield plate toward the control board, the second heat dissipating portion includes side surfaces of a quadrangular prism that extends from the shield plate toward the control board; and

a dielectric body that is arranged between the first heat dissipating portion and the second heat dissipating portion, the dielectric body is arranged directly contacting the first heat dissipating portion and the second heat dissipating portion, on an inside of the side surfaces of the quadrangular prism,

wherein the dielectric body, a contact portion of the first heat dissipating portion that contacts the dielectric body, a contact portion of the second heat dissipating portion that contacts the dielectric body, and the side surfaces of the quadrangular prism form a capacitor.

14. The semiconductor module according to claim 13 , wherein the side surfaces of the quadrangular prism is arranged between the plurality of first radiation fins, in a direction parallel to the first surface.

15. A semiconductor module comprising:

a control board having a surface;

a shield plate arranged opposing the control board, the shield plate having a first surface opposing the surface of the control board, the surface of the control board and the first surface of the shield plate being parallel to each other;

a first heat dissipating portion that is made of metal, the first heat dissipating portion being provided on the surface of the control board, the first heat dissipating portion having a plurality of first radiation fins, the plurality of first radiation fins extending from the surface of the control board to the shield plate, and the first heat dissipating portion includes side surfaces of a quadrangular prism that extends from the control board toward the shield plate;

a second heat dissipating portion that is made of metal, the second heat dissipating portion being provided on the first surface of the shield plate, the second heat dissipating portion having a plurality of second radiation fins, and the plurality of second radiation fins extending from the first surface of the shield plate toward the control board; and

a dielectric body that is arranged between the first heat dissipating portion and the second heat dissipating portion, the dielectric body is arranged directly contacting the first heat dissipating portion and the second heat dissipating portion, on an inside of the side surfaces of the quadrangular prism,

wherein the dielectric body, a contact portion of the first heat dissipating portion that contacts the dielectric body, a contact portion of the second heat dissipating portion that contacts the dielectric body, and the side surfaces of the quadrangular prism form a capacitor.

16. The semiconductor module according to claim 15 , wherein the side surfaces of the quadrangular prism is arranged between the plurality of second radiation fins, in a direction parallel to the first surface.