High illumination efficiency light emitting diode
View Patent ↗A light emitting diode includes a substrate, a first semiconductor layer, a luminous layer, a second semiconductor layer, a current diffusion layer, a third semiconductor layer, a first electrode, a second electrode, and an insulation layer. The first semiconductor layer is formed above the substrate. The luminous layer is formed on the first semiconductor layer, and exposes a portion of the first semiconductor layer. The second semiconductor layer is formed on the luminous layer. The current diffusion layer is formed on the second semiconductor layer. The third semiconductor layer is formed on the current diffusion layer. The first electrode is formed on the first semiconductor layer. The second electrode includes a base portion formed on the surface of the substrate, and plural comb structures extending upward vertically. Each tip of the comb structure is in the third semiconductor layer. The insulation layer exposes the tip of each comb structure.
1. A light emitting diode, comprising:
a substrate;
a first semiconductor layer formed above the substrate;
a luminous layer formed on a portion of the first semiconductor layer, wherein the luminous layer exposes a portion of the surface of the first semiconductor layer;
a second semiconductor layer formed on the luminous layer;
a current diffusion layer formed on the second semiconductor layer, wherein the current diffusion layer includes a plurality of through holes;
a third semiconductor layer formed on the current diffusion layer, wherein a resistance of the current diffusion layer is greater than a resistance of the third semiconductor layer and a resistance of the second semiconductor layer;
a first electrode formed on the exposed surface of the first semiconductor layer;
a second electrode comprising a base portion formed on the surface of the substrate, and a plurality of comb structures extending upward vertically, wherein each of the comb structures penetrates the first semiconductor layer, the luminous layer, the second semiconductor layer, the current diffusion layer and portion of the third semiconductor layer, and each tip of the comb structures is in the third semiconductor layer; and
an insulation layer covering the outer surface of the second electrode which contacts the first semiconductor layer, the luminous layer, the second semiconductor layer, the current diffusion layer, and the third semiconductor layer, wherein the insulation layer exposes the tip of each of the comb structures so that the tips contact the third semiconductor layer.
2. The light emitting diode of claim 1 , wherein the current diffusion layer is formed of a super-lattice stacked structure.
3. The light emitting diode of claim 2 , wherein the super-lattice stacked structure includes:
at least one aluminum gallium nitride layer; and
at least one gallium nitride layer, wherein the aluminum gallium nitride layer and the gallium nitride layer are stacked to each other.
4. The light emitting diode of claim 3 , wherein the aluminum gallium nitride layer is doped with N-type impurities or P-type impurities.
5. The light emitting diode of claim 1 , wherein the current diffusion layer is a gallium nitride layer doped with N-type impurities or P-type impurities.
6. The light emitting diode of claim 1 , wherein the first semiconductor layer is a P-type semiconductor layer, and the second semiconductor layer and the third semiconductor layer are N-type semiconductor layers, or wherein the first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer and the third semiconductor layer are P-type semiconductor layers.
7. The light emitting diode of claim 1 , wherein each of the comb structures is cylinder-shaped or cone-shaped.
8. The light emitting diode of claim 7 , wherein a cross-sectional area of the tip of the cone-shaped comb structure is smaller than a cross-sectional area of the cone-shaped comb structures where contacts the base portion.