Anchor vias for improved backside metal adhesion to semiconductor substrate
Disclosed is a structure having anchor vias for improved backside metal adhesion and an associated method for the structure's fabrication. The structure includes at least one anchor via disposed in at least one corner of a semiconductor substrate. A metal filler may be formed within the at least one anchor via, the metal filler having a protruding portion extending from a backside of the semiconductor substrate. The structure may further include a backside metal layer on a bottom surface of the semiconductor substrate, the backside metal layer being bonded to the protruding portion of the metal filler in the at least one anchor via. The at least one anchor via may include a cluster of anchor vias, a plurality of anchor vias disposed in a straight line and/or in a staggered configuration along a periphery of the semiconductor substrate.
1. A structure comprising:
at least one anchor via disposed in at least one corner of a semiconductor substrate;
a metal filler within said at least one anchor via, said metal filler having a protruding portion extending from a backside of said semiconductor substrate;
a backside metal layer on a bottom surface of said semiconductor substrate, said backside metal layer being bonded to said protruding portion of said metal filler of said at least one anchor via;
wherein said metal filler within said at least one anchor via does not provide ground connection to one or more active devices in said semiconductor substrate.
2. The structure of claim 1 , wherein said at least one anchor via comprises a cluster of anchor vias.
3. The structure of claim 2 , wherein each anchor via within said cluster of anchor vias is oriented perpendicular to an adjacent anchor via within said cluster of anchor vias.
4. The structure of claim 1 , wherein said at least one anchor via comprises a plurality of anchor vias disposed in a straight line along a periphery of said semiconductor substrate.
5. The structure of claim 4 , wherein a linear density of said plurality of anchor vias is less than approximately 10% of a total linear distance of said straight line along said periphery of said semiconductor substrate.
6. The structure of claim 1 , wherein said at least one anchor via comprises a plurality of anchor vias disposed in a staggered configuration along a periphery of said semiconductor substrate.
7. The structure of claim 1 , wherein a total area of said at least one anchor via is less than approximately 0.5% of a total area of said semiconductor substrate.
8. The structure of claim 1 , wherein said backside metal layer comprises at least one of an interface layer, a conduction layer, and a packaging layer.
9. The structure of claim 1 , wherein said metal filler within said at least one anchor via is bonded to a metal layer overlying said semiconductor substrate.
10. The structure of claim 1 , further comprising an insulating layer disposed between said semiconductor substrate and said metal filler in said at least one anchor via.
11. A method comprising:
forming at least one anchor via in at least one corner of a semiconductor substrate;
depositing a metal filler within said at least one anchor via, said metal filler having a protruding portion extending from a backside of said semiconductor substrate;
forming a backside metal layer on a bottom surface of said semiconductor substrate, said backside metal layer being bonded to said protruding portion of said metal filler of said at least one anchor via;
wherein said metal filler within said at least one anchor via does not provide ground connection to one or more active devices in said semiconductor substrate.
12. The method of claim 11 , wherein said forming said at least one anchor via comprises forming a cluster of anchor vias.
13. The method of claim 12 , wherein each anchor via within said cluster of anchor vias is oriented perpendicular to an adjacent anchor via within said cluster of anchor vias.
14. The method of claim 11 , wherein said forming said at least one anchor via comprises forming a plurality of anchor vias in a straight line along a periphery of said semiconductor substrate.
15. The method of claim 14 , wherein a linear density of said plurality of anchor vias is less than approximately 10% of a total linear distance of said straight line along said periphery of said semiconductor substrate.
16. The method of claim 11 , wherein said forming said at least one anchor via comprises forming a plurality of anchor vias disposed in a staggered configuration along a periphery of said semiconductor substrate.
17. The method of claim 11 , wherein a total area of said at least one anchor via is less than approximately 0.5% of a total area of said semiconductor substrate.
18. The method of claim 11 , wherein said forming said backside metal layer on a bottom surface of said semiconductor substrate comprises at least one of:
forming an interface layer;
forming a conduction layer;
forming a packaging layer.
19. The method of claim 11 , further comprising bonding said metal filler within said at least one anchor via to a metal layer overlying said semiconductor substrate.
20. The method of claim 11 , further comprising forming an insulating layer between said semiconductor substrate and said metal filler in said at least one anchor via.