Method of forming interconnection lines
The invention concerns a method comprising: forming a plurality of parallel lines ( 502, 504, 506 ) of a sacrificial material over a layer of conductive material ( 510 ) of an integrated circuit, said parallel lines being separated by trenches, at least one of said lines being interrupted along its length by an opening ( 516 ) dividing it into first and second line portions ( 504 A, 504 B) separated by a space (S); forming spacers ( 522, 524, 526, 528, 530 ) in said trenches on lateral sides of said line portions and filling at least a bottom part of said opening between the line portions; removing the sacrificial material by etching; and forming interconnection lines ( 302, 304 A, 304 B, 306 A, 306 B, 308, 310 ) of said conductive material based on a pattern defined by said spacers.
1. A method comprising:
forming a plurality of parallel lines in an upper mask layer, the upper mask layer being over and in contact with a lower mask layer, and the lower mask layer being over a layer of conductive material of an integrated circuit, said plurality of parallel lines being separated by trenches,
forming an opening dividing at least one of the plurality of parallel lines into first and second line portions separated by a space;
forming spacers in said trenches on lateral sides of said first and second line portions and substantially filling at least a bottom part of said opening between the first and second line portions;
removing the plurality of parallel lines along with corresponding portions of the lower mask layer below the plurality of parallel lines;
removing the spacers to define a corresponding pattern in the lower mask layer, wherein the corresponding pattern in the lower mask includes a connection corresponding to the opening dividing the at least one of the plurality of parallel lines, and the connection extending perpendicularly between two adjacent lines of the corresponding pattern in the lower mask; and
forming interconnection lines of said conductive material based on the pattern defined in the lower mask layer.
2. The method of claim 1 , wherein said spacers have a width in a range 18 nm to 45 nm, and wherein said space between the first and second line portions is between 1.25 and 1.75 times the width of said spacers.
3. The method of claim 1 , wherein said trenches separating said plurality of parallel lines have a width in a range 54 nm to 135 nm.
4. The method of claim 1 , wherein the spacers filling said opening define, during the formation of the interconnection lines, a connection between first and second adjacent parallel interconnection lines, the method further comprising:
making a first cut interrupting a first interconnection line along its length to form first and second interconnection line portions; and
making a second cut interrupting a second interconnection line along its length to form third and fourth interconnection line portions, wherein said first and fourth interconnection line portions are electrically connected by said connection between the first and second adjacent parallel interconnection lines.
5. The method of claim 4 , wherein a distance between centers of said first and second cuts is less than 80 nm.
6. The method of claim 4 , wherein a distance between centers of said first and second cuts is equal to at least 80 nm.
7. The method of claim 1 , wherein said conductive material comprises polysilicon.
8. The method of claim 1 , wherein forming said spacers comprises:
depositing a layer of silicon oxide; and partially etching the layer of silicon oxide to expose at least a portion of the bottom of said trenches.