Heating phase change material
View Patent ↗A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.
1. A method comprising:
spacing a pair of chalcogenide layers by first and second intervening layers, wherein said first and second intervening layers are disposed between a top surface of a first chalcogenide layer of said pair of chalcogenide layers and a bottom surface of a second chalcogenide layer of said pair of chalcogenide layers, wherein the second intervening layer is silicon nitride; and
forming an opening through said first intervening layer to reduce spacing between said pair of chalcogenide layers.
2. The method of claim 1 including forming said chalcogenide layers of different chalcogenide materials.
3. The method of claim 2 including forming a select device of one of said chalcogenide layers and forming a memory element of the other of said chalcogenide layers.
4. The method of claim 1 including forming a first and second contact such that said first contact contacts one of said chalcogenide layers and said second contact contacts the other chalcogenide layer.
5. The method of claim 4 including spacing said contacts away from said opening along the length of said chalcogenide layers.
6. The method of claim 5 including aligning said contacts to one another.
7. The method of claim 1 including forming said first and second intervening layers of a material that is more resistive than said chalcogenide layers.
8. The method of claim 1 including completely separating said chalcogenide layers with said second intervening layer.
9. The method of claim 1 including contacting said first chalcogenide layer and said second intervening layer at said opening.
10. The method of claim 1 including forming said second intervening layer directly on one of said chalcogenide layers.
11. A method comprising:
disposing first and second intervening layers between first and second chalcogenide layers, wherein the first intervening layer is disposed on a top surface of the second intervening layer; and
forming an opening in the second intervening layer so that the first intervening layer contacts the first and second chalcogenide layers only within the opening, wherein the first intervening layer is silicon nitride.
12. The method of claim 11 , wherein the second intervening layer is an insulator.
13. The method of claim 11 , wherein the first and second chalcogenide layers are different.
14. The method of claim 11 , wherein the first intervening layer has a greater resistance than the first and second chalcogenide layers.
15. The method of claim 11 , wherein the first intervening layer is about 10 to 50 Angstroms in thickness.
16. The method of claim 11 , further comprising:
forming a first contact to the first chalcogenide layer; and
forming a second contact to the second chalcogenide layer, wherein the first and second contacts are formed a distance away from the opening in the first intervening layer.
17. A method comprising:
forming openings in an insulating layer disposed between first and second chalcogenide layers, wherein a top side of the insulating layer contacts a bottom side of the first chalcogenide layer; and
depositing an intervening layer between the second chalcogenide layer and the insulating layer, wherein the intervening layer directly contacts the first and second chalcogenide layers in the openings formed in the insulating layer, wherein the insulating material is silicon nitride.
18. The method of claim 17 , wherein the first and second chalcogenide layers are of different compositions.