Encapsulant for a semiconductor device
A mold compound is provided for encapsulating a semiconductor device ( 101 ). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.
1. A mold compound for encapsulating an electronic device, the mold compound comprising:
silica fillers;
epoxy resin system; and
beneficial ions that are beneficial with respect to copper ball bond corrosion,
wherein a total level of the beneficial ions in the mold compound is at least approximately 500 ppm, and
the beneficial ions are ions selected from the group consisting of formate (HCOO) − , acetate (CH 3 CO 2 ) − , and nitrite (NO 2 ) − .
2. The mold compound of claim 1 , wherein the total level of the beneficial ions in the mold compound is less than or equal to approximately 2000 ppm.
3. The mold compound of claim 1 , wherein the total level of the beneficial ions in the mold compound is over 600 ppm.
4. The mold compound of claim 3 , wherein the total level of the beneficial ions in the mold compound is less than or equal to approximately 2000 ppm.
5. The mold compound of claim 1 , wherein the beneficial ions are a combination of formate (HCOO) − and acetate (CH 3 CO 2 ) − ions.
6. The mold compound of claim 5 , wherein the total level of the beneficial ions in the mold compound is less than or equal to approximately 2000 ppm.
7. The mold compound of claim 1 , wherein the beneficial ions are nitrite (NO 2 ) − ions.
8. The mold compound of claim 1 ,
wherein a pH level of the mold compound is 6.0-8.0,
a level of chloride ions in the mold compound is less than or equal to 5 ppm, and
an operating voltage level of the electronic device is less than or equal to 65V.
9. The mold compound of claim 1 , wherein at least one of:
a moisture absorption level of the mold compound is less than 0.3% by weight,
an oxalate ion level of the mold compound is less than or equal to 50 ppm, and
a magnesium ion level of the mold compound is at least 200 ppm.
10. A semiconductor device package comprising:
an electronic device that includes an aluminum bond pad;
a copper wire bonded to the aluminum bond pad; and
an encapsulant, the electronic device and the copper wire being encapsulated by the encapsulant,
wherein the encapsulant comprises:
epoxy resin system, and
beneficial ions that are beneficial with respect to copper ball bond corrosion, a total level of the beneficial ions in the encapsulant being less than or equal to approximately 2000 ppm.
11. The semiconductor device package of claim 10 , wherein the total level of the beneficial ions in the encapsulant is at least approximately 500 ppm.
12. The semiconductor device package of claim 10 , wherein the beneficial ions are ions selected from the group consisting of formate, acetate, carbonate, and nitrite.
13. The semiconductor device package of claim 12 , wherein the total level of the beneficial ions in the encapsulant is at least approximately 500 ppm.
14. The semiconductor device package of claim 12 , wherein the beneficial ions are a combination of formate (HCOO) − and acetate (CH 3 CO 2 ) − ions.
15. The semiconductor device package of claim 12 , wherein the beneficial ions are nitrite (NO 2 ) − ions.
16. A mold compound for encapsulating an electronic device, the mold compound comprising:
silica fillers;
epoxy resin system; and
beneficial ions that are beneficial with respect to copper ball bond corrosion,
wherein a total level of the beneficial ions in the mold compound is at least approximately 200 ppm, and
the beneficial ions are ions selected from the group consisting of phosphate (PO 4 ) 3− and nitrite (NO 2 ) − .
17. The mold compound of claim 16 , wherein the total level of phosphate (PO 4 ) 3− ions in the mold compound is at least approximately 200 ppm.
18. The mold compound of claim 16 , wherein the total level of nitrite (NO 2 ) − ions in the mold compound is at least approximately 200 ppm.
19. The mold compound of claim 16 ,
wherein a pH level of the mold compound is 6.0-8.0,
a level of chloride ions in the mold compound is less than or equal to 5 ppm, and
an operating voltage level of the electronic device is less than or equal to 65V.
20. The mold compound of claim 16 , wherein at least one of:
a moisture absorption level of the mold compound is less than 0.3% by weight,
an oxalate ion level of the mold compound is less than or equal to 50 ppm, and
a magnesium ion level of the mold compound is at least 200 ppm.