IP Library Granted Patent US 9,190,339
Granted Patent B2
US 9,190,339 · App. 14/170,653 · Granted Nov 17, 2015

Method of limiting capillary action of gel material during assembly of pressure sensor

Inventors: Soon Kang Chan (Segar Jaya, MY); Voon Kwai Leong (Sri Petaling, MY); Wai Keong Wong (Shah Alam, MY)
Assignee: FREESCALE SEMICONDUCTOR, INC.
H01L23/3107B81B7/0038B81C1/00285G01L9/0098H01L21/56H01L23/04B81B2201/0264H01L2224/48091H01L2224/48137H01L2224/48247H01L2224/73265H01L2224/8592H01L2924/0002
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Quick Facts
Patent No.
US 9,190,339
App. No.
14/170,653
Granted
Nov 17, 2015
Kind
B2
Abstract

A method for applying a pressure-sensitive gel material during assembly of an array of pre-singulated packaged semiconductor devices. In the method, pressure-sensitive gel material is dispensed onto a first semiconductor device of the array, where the first semiconductor device is disposed within a first cavity. A first curing process is performed to partially cure the pressure-sensitive gel material in the first cavity. Pressure-sensitive gel material is then dispensed onto another semiconductor device of the array, where the other semiconductor device is disposed within another cavity. The first curing process is initiated before the dispensing of the pressure-sensitive gel material inside of the other cavity is completed and initially cures pressure-sensitive gel material for fewer than all of the pre-singulated packaged semiconductor devices of the array.

Claims (24)

1. A method for applying pressure-sensitive gel material during assembly of an array of pre-singulated packaged semiconductor devices, the method comprising:

(a) dispensing pressure-sensitive gel material onto a first semiconductor device of the array, wherein the first semiconductor device is disposed within a first cavity;

(b) performing a first curing process to partially cure the pressure-sensitive gel material inside the first cavity, wherein the first curing process limits capillary action of the pressure-sensitive gel material, and wherein the first curing process comprises using both of (i) an overhead curing device positioned above the first semiconductor device and (ii) an underneath curing device positioned under a substrate of the first semiconductor device;

(c) dispensing pressure-sensitive gel material onto another semiconductor device of the array, wherein:

the other semiconductor device is mounted inside another cavity;

step (b) is initiated before step (c) is completed; and

the first curing process initially cures pressure-sensitive gel material for fewer than all of the pre-singulated packaged semiconductor devices of the array; and

(d) performing a second curing process to complete the curing of the pressure-sensitive gel material, wherein the second curing process is performed simultaneously on all of the semiconductor devices of the array.

2. The method of claim 1 , wherein the pressure-sensitive gel material is dispensed in step (a) such that the pressure-sensitive gel contacts inner walls of the first cavity.

3. The method of claim 1 , wherein the first curing process comprises curing one or both of (i) an upper layer of the pressure-sensitive gel material inside the first cavity and (ii) a perimeter layer of the pressure-sensitive gel material that is adjacent to an inner wall of the first cavity.

4. The method of claim 1 , wherein:

the pressure-sensitive gel material is dispensed into the first cavity with a convex shape; and

the first curing process stops the capillary action before an upper-most surface of the pressure-sensitive gel material inside the first cavity becomes concave in shape.

5. The method of claim 1 , wherein the first curing process stops the capillary action before the capillary action exposes, to ambient atmosphere above the first semiconductor device, any portion of (i) the first semiconductor device and (ii) one or more electrical interconnections between the first semiconductor device and at least one other package element.

6. The method of claim 1 , wherein the first curing process is applied to fewer than all of the pre-singulated packaged semiconductor devices of the array.

7. The method of claim 1 , wherein the first curing process is applied to all of the pre-singulated packaged semiconductor devices of the array, even those in which pressure-sensitive gel material has not yet been dispensed.

8. A packaged semiconductor device assembled by the method of claim 1 .

9. A method for applying pressure-sensitive gel material during assembly of a pressure sensor device, the method comprising:

covering a pressure sensor die with a pressure-sensitive gel material, wherein the die is disposed within a cavity and the gel material contacts inner walls of the cavity;

performing a first curing process to partially cure an upper layer of the gel material, wherein the first curing process comprises using both of (i) an overhead curing device positioned above the pressure sensor die and (ii) an underneath curing device positioned under a substrate of the pressure sensor die, and wherein said partially cured upper layer limits capillary action of the gel material inside the cavity;

performing a second curing process to complete curing of the pressure-sensitive gel material inside the first cavity, wherein the gel material has a convex shape when first dispensed into the cavity, and the first curing process stops the capillary action before an upper-most surface of the gel material inside the cavity becomes concave in shape; and

placing a lid over the cavity.

10. The method of claim 9 , wherein the first curing process cures one or both of an upper layer of the gel material inside the cavity, and a perimeter layer of the gel material that is adjacent to the inner walls of the cavity.

11. The method of claim 9 , wherein the first curing process stops the capillary action before the capillary action exposes, to ambient atmosphere above the pressure sensor die, any portion of the pressure sensor die, and one or more electrical interconnections between the pressure sensor die and at least one other package element.

Assignments (18)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2026
From: NXP USA, INC.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 075045/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION NUMBERS PREVIOUSLY RECORDED AT REEL: 037458 FRAME: 0438. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded May 12, 2016
From: CITIBANK, NA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038665/0136 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT APPLICATION NUMBERS 12222918, 14185362, 14147598, 14185868 & 14196276 PREVIOUSLY RECORDED AT REEL: 037458 FRAME: 0479. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded May 12, 2016
From: CITIBANK, NA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038665/0498 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037458/0479 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037458/0438 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0763 →
SUPPLEMENT TO SECURITY AGREEMENT Recorded May 7, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 032845/0522 →
SUPPLEMENT TO SECURITY AGREEMENT Recorded May 7, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 032845/0497 →
SUPPLEMENT TO SECURITY AGREEMENT Recorded May 7, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 032845/0442 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2014
From: CHAN, SOON KANG; LEONG, VOON KWAI; WONG, WAI KEONG
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 032115/0274 →
Continuity (1)
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