Thermal pads between stacked semiconductor dies and associated systems and methods
Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads that directly contact the adjacent silicon dies in the stack without the intervening layers of the low thermal conductivity materials (e.g., passivation materials). In some embodiments, the manufacturing yield of the stack can be improved by having generally coplanar top surfaces of the thermal pads and under-bump metallization (UBM) structures.
1. A semiconductor die comprising:
a silicon material having a first side, a second side facing away from the first side, a plurality of indentations at the first side, and a plurality of via openings extending from the indentations at the first side through at least a portion of the silicon material;
a passivation material on the first side of the silicon material;
an active structure in the silicon material at the second side, the active structure having electrical circuits;
a plurality of through-silicon vias (TSVs) disposed in the corresponding plurality of via openings, wherein individual TSVs have a first end at the first side of the silicon material and a second end opposite from the first end, and wherein the individual TSVs project from the adjacent silicon material of the indentations at the first side of the silicon material;
a plurality of under-bump metallization (UBM) structures, wherein individual UBM structures comprise a first portion of a conductive material, wherein the first portion caps the first end of a corresponding one of the TSVs and extends around sidewalls of the first end and into a corresponding one of the indentations, wherein at least a portion of the indentations includes a lateral open area between individual UBM structures and the passivation material adjacent the individual UBM structures, and wherein the passivation material is between individual UBM structures and the silicon material; and
a thermal pad in contact with the first side of the silicon material, wherein the thermal pad comprises a second portion of the conductive material,
wherein the UBM structures and the thermal pad have a first surface facing the first side of the silicon material and a second surface facing away from the first side of the silicon material, and wherein the second surfaces of the UBM structures and the thermal pad are generally coplanar.
2. The semiconductor die of claim 1 wherein the passivation material contacts the first and second portions of the conductive material.
3. The semiconductor die of claim 1 wherein the passivation material is a polyimide material.
4. The semiconductor die of claim 3 wherein the thermal pad has a side surface between the first and second surfaces, and wherein the polyimide material extends at least partially along the side surface of the thermal pad.
5. The semiconductor die of claim 1 , further comprising an adhesion material between the thermal pad and the silicon material.
6. The semiconductor die of claim 5 wherein the adhesion material is selected from a group consisting of Ti and TiW.
7. The semiconductor die of claim 1 wherein the thermal pad comprises copper.
8. A stack of semiconductor dies comprising:
a first semiconductor die having:
a silicon material having a first side and a second side facing away from the first side, a plurality of indentations at the first side, and a plurality of via openings extending from the indentations at the first side through at least a portion of the silicon material, a passivation material on the first side of the silicon material, an active structure in the silicon material at the second side,
a plurality of through-silicon vias (TSVs) disposed in the corresponding plurality of via openings, wherein individual TSVs have a first end at the first side of the silicon material and a second end opposite from the first end, wherein the individual TSVs project from the adjacent silicon material of the indentations at the first &de of the silicon material, a plurality of under-bump metallization (UBM) structures, wherein individual UBM structures comprise a first portion of a conductive material, wherein the first portion caps the first end of the corresponding one of the TSVs and extends around sidewalls of the first end and into a corresponding one of the indentations, the individual UBM structures having a first surface facing the first side of the silicon material and a second surface facing away from the first side of the silicon material, wherein the passivation material is between the first side of individual UBM structures and the silicon material and wherein at least a portion of the indentations includes a lateral open area between individual UBM structures and the passivation material adjacent the individual UBM structures, and
a thermal pad having a first surface in contact with the first side of the silicon material and a second surface facing away from the first side of the silicon material, wherein the thermal pad comprises a second portion of the conductive material; and a second semiconductor die having:
a first side facing the first semiconductor die and a second side facing away from the first side, and
a plurality of die pads facing the corresponding plurality of the UBM structures of the first semiconductor die,
wherein the second surfaces of the UBM structures and the second surfaces of the thermal pads are generally coplanar with the first side of the second semiconductor die.
9. The stack of semiconductor dies of claim 8 wherein the passivation material is a polyimide material.
10. The stack of semiconductor dies of claim 8 , further comprising an adhesion material between the thermal pads and the silicon material.
11. The stack of semiconductor die of claim 8 wherein the first surface of the thermal pad contacts the first side of the silicon material of the first semiconductor die.