Methods and apparatuses including an asymmetric assist device
Apparatuses and methods have been disclosed. One such apparatus includes a plurality of memory cells that can be formed at least partially surrounding a semiconductor pillar. A select device can be coupled to one end of the plurality of memory cells and at least partially surround the pillar. An asymmetric assist device can be coupled between the select device and one of a source connection or a drain connection. The asymmetric assist device can have a portion that at least partially surrounds the pillar and another portion that at least partially surrounds the source or drain connection.
1. A method comprising:
biasing a control gate of a selected memory cell of a string of memory cells in a selected string of memory cells to a sense voltage;
biasing control gates of other ones of the string of memory cells in the selected string of memory cells to a pass voltage;
biasing a gate of a select device of a deselected string of memory cells including a memory cell with a control gate coupled to the control gate of the selected memory cell to a disable voltage; and
biasing a gate of an asymmetric assist device coupled between the select device and a data line to a voltage greater than the disable voltage.
2. The method of claim 1 and further comprising biasing the data line to the voltage greater than the disable voltage.
3. The method of claim 1 wherein the disable voltage is 0V and the voltage greater than the disable voltage is any voltage that provides an adequate sensing margin window.
4. The method of claim 3 wherein the voltage greater than the disable voltage is 2-4V, and the pass voltage is greater than the disable voltage.
5. The method of claim 1 , wherein biasing the gate of the asymmetric assist device shifts a point of leakage generation in a semiconductor pillar associated with the deselected string of memory cells from a doped junction of the assist device to an undoped junction of the pillar wherein a channel dopant gradient is less than that which is present at source and drain regions.
6. The method of claim 1 wherein the asymmetric assist device is an asymmetric vertical transistor.
7. The method of claim 1 , wherein the pass voltage is 10V.
8. A method comprising:
biasing a control gate of a selected memory cell of a string of memory cells in a selected string of memory cells to a programming voltage;
biasing a gate of a select device of a deselected string of memory cells including a memory cell with a control gate coupled to the control gate of the selected memory cell to a disable voltage;
biasing a source connection of the deselected string of memory cells to a source voltage; and
biasing a gate of an asymmetric assist device coupled between the select device and the source connection to approximately a same voltage as the source voltage.
9. The method of claim 8 wherein biasing the gate of the asymmetric assist device to the approximately the same voltage as the source voltage causes a first voltage drop at a virtual junction between the select device and the asymmetric assist device that is greater than a second voltage drop at a junction between the asymmetric assist device and the source connection.
10. The method of claim 8 and further biasing control gates of other memory cells of the string of memory cells in the selected string of memory cells to a pass voltage.
11. The method of claim 10 , wherein the pass voltage is 10V.
12. The method of claim 8 wherein biasing the source connection urce voltage comprises applying the source voltage to a source coupled to the source connection.
13. The method of claim 8 wherein biasing the gate of the asymmetric assist device to approximately the same voltage as the source voltage comprises applying the source voltage to the gate of the asymmetric assist device, wherein the gate of the asymmetric assist device at least partially surrounds both a semiconductor pillar and the source connection.
14. The method of claim 8 wherein the disable voltage is 0V and the source voltage is greater than the disable voltage.
15. The method of claim 14 wherein the source voltage is any voltage that provides an adequate sensing margin window.
16. The method of claim 15 wherein the source voltage is 2-4V.
17. The method of claim 8 wherein the programming voltage is greater than the source voltage.
18. The method of claim 8 wherein the programming voltage is 15-20V.
19. The method of claim 8 wherein the asymmetric assist device is an asymmetric vertical transistor.
20. The method of claim 8 , wherein the select device comprises a source select gate transistor and the assist device comprises a source assist device coupled between the source connection and the source select gate transistor.