Light emitting device
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
1. A light emitting device comprising:
a semiconductor layer;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a second insulating film over the gate electrode;
a power supply line over the second insulating film;
a capacitor; and
a light emitting element,
wherein the semiconductor layer comprises a source region, a drain region, and a channel formation region,
wherein the gate electrode overlaps with the channel formation region,
wherein the light emitting element is electrically connected to one of the source region and the drain region,
wherein the power supply line is electrically connected to the other of the source region and the drain region,
wherein the power supply line overlaps with the gate electrode,
wherein the power supply line overlaps with the semiconductor layer,
wherein the semiconductor layer comprises a part having a serpentine shape,
wherein the part is the channel formation region,
wherein the capacitor overlaps with the channel formation region, and
wherein the capacitor comprises the gate electrode as one electrode of the capacitor, the power supply line as the other electrode of the capacitor, and the second insulating film as a dielectric of the capacitor.
2. The light emitting device according to claim 1 , wherein a ratio of a channel width W of the channel formation region to a channel length L of the channel formation region is from 0.1 to 0.01.
3. The light emitting device according to claim 1 , further comprising:
a substrate,
wherein the light emitting element is provided over the substrate, and
wherein the light emitting element emits light to a substrate side.
4. The light emitting device according to claim 1 , wherein a channel length L of the channel formation region is 100 μm or more.
5. The light emitting device according to claim 1 , further comprising:
a source wiring,
wherein the power supply line extends in the same direction as the source wiring.
6. An electronic device comprising the light emitting device according to claim 1 .
7. A light emitting device comprising:
a semiconductor layer;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a second insulating film over the gate electrode;
a source wiring over the second insulating film;
a power supply line over the second insulating film;
a capacitor; and
a light emitting element,
wherein the semiconductor layer comprises a source region, a drain region, and a channel formation region,
wherein the gate electrode overlaps with the channel formation region,
wherein the light emitting element is electrically connected to one of the source region and the drain region,
wherein the power supply line is electrically connected to the other of the source region and the drain region,
wherein the power supply line overlaps with the gate electrode,
wherein the power supply line overlaps with the semiconductor layer,
wherein the semiconductor layer comprises a part snaking in an extending direction of the source wiring,
wherein the part is the channel formation region,
wherein the capacitor overlaps with the channel formation region, and
wherein the capacitor comprises the gate electrode as one electrode of the capacitor, the power supply line as the other electrode of the capacitor, and the second insulating film as a dielectric of the capacitor.
8. The light emitting device according to claim 7 , wherein a ratio of a channel width W of the channel formation region to a channel length L of the channel formation region is from 0.1 to 0.01.
9. The light emitting device according to claim 7 , further comprising:
a substrate,
wherein the light emitting element is provided over the substrate, and
wherein the light emitting element emits light to a substrate side.
10. The light emitting device according to claim 7 , wherein a channel length L of the channel formation region is 100 μm or more.
11. The light emitting device according to claim 7 , wherein the power supply line extends in the same direction as the source wiring.
12. An electronic device comprising the light emitting device according to claim 7 .
13. A light emitting device comprising:
a semiconductor layer;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a gate wiring over the first insulating film;
a second insulating film over the gate electrode;
a power supply line over the second insulating film;
a capacitor; and
a light emitting element,
wherein the semiconductor layer comprises a source region, a drain region, and a channel formation region,
wherein the gate electrode overlaps with the channel formation region,
wherein the light emitting element is electrically connected to one of the source region and the drain region,
wherein the power supply line is electrically connected to the other of the source region and the drain region,
wherein the power supply line overlaps with the gate electrode,
wherein the power supply line overlaps with the semiconductor layer,
wherein the semiconductor layer comprises a part having a serpentine shape generally extending in a direction parallel to the gate wiring,
wherein the part is the channel formation region,
wherein the capacitor overlaps with the channel formation region, and
wherein the capacitor comprises the gate electrode as one electrode of the capacitor, the power supply line as the other electrode of the capacitor, and the second insulating film as a dielectric of the capacitor.
14. The light emitting device according to claim 13 , wherein a ratio of a channel width W of the channel formation region to a channel length L of the channel formation region is from 0.1 to 0.01.
15. The light emitting device according to claim 13 , further comprising:
a substrate,
wherein the light emitting element is provided over the substrate, and
wherein the light emitting element emits light to a substrate side.
16. The light emitting device according to claim 13 , wherein a channel length L of the channel formation region is 100 μm or more.
17. The light emitting device according to claim 13 , further comprising:
a source wiring,
wherein the power supply line extends in the same direction as the source wiring.
18. An electronic device comprising the light emitting device according to claim 13 .
19. A light emitting device comprising:
a semiconductor layer;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a second insulating film over the gate electrode;
a source wiring over the second insulating film;
a power supply line over the second insulating film;
a capacitor; and
a light emitting element,
wherein the semiconductor layer comprises a source region, a drain region, and a channel formation region,
wherein the gate electrode overlaps with the channel formation region,
wherein the light emitting element is electrically connected to one of the source region and the drain region,
wherein the power supply line is electrically connected to the other of the source region and the drain region,
wherein the power supply line overlaps with the gate electrode,
wherein the power supply line overlaps with the semiconductor layer,
wherein the source wiring overlaps with the semiconductor layer,
wherein the semiconductor layer comprises a part having a serpentine shape,
wherein the part is the channel formation region,
wherein the capacitor overlaps with the channel formation region, and
wherein the capacitor comprises the gate electrode as one electrode of the capacitor, the power supply line as the other electrode of the capacitor, and the second insulating film as a dielectric of the capacitor.
20. The light emitting device according to claim 19 , wherein a ratio of a channel width W of the channel formation region to a channel length L of the channel formation region is from 0.1 to 0.01.
21. The light emitting device according to claim 19 , further comprising:
a substrate,
wherein the light emitting element is provided over the substrate, and
wherein the light emitting element emits light to a substrate side.
22. The light emitting device according to claim 19 , wherein a channel length L of the channel formation region is 100 μm or more.
23. The light emitting device according to claim 19 , wherein the power supply line extends in the same direction as the source wiring.
24. An electronic device comprising the light emitting device according to claim 19 .
25. A light emitting device comprising:
a semiconductor layer;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a second insulating film over the gate electrode;
a source wiring over the second insulating film;
a power supply line over the second insulating film;
a capacitor; and
a light emitting element,
wherein the semiconductor layer comprises a source region, a drain region, and a channel formation region,
wherein the gate electrode overlaps with the channel formation region,
wherein the light emitting element is electrically connected to one of the source region and the drain region,
wherein the power supply line is electrically connected to the other of the source region and the drain region,
wherein the power supply line overlaps with the gate electrode,
wherein the power supply line overlaps with the semiconductor layer,
wherein the source wiring overlaps with the semiconductor layer,
wherein the semiconductor layer comprises a part snaking in an extending direction of the source wiring,
wherein the part is the channel formation region,
wherein the capacitor overlaps with the channel formation region, and
wherein the capacitor comprises the gate electrode as one electrode of the capacitor, the power supply line as the other electrode of the capacitor, and the second insulating film as a dielectric of the capacitor.
26. The light emitting device according to claim 25 , wherein a ratio of a channel width W of the channel formation region to a channel length L of the channel formation region is from 0.1 to 0.01.
27. The light emitting device according to claim 25 , further comprising:
a substrate,
wherein the light emitting element is provided over the substrate, and
wherein the light emitting element emits light to a substrate side.
28. The light emitting device according to claim 25 , wherein a channel length L of the channel formation region is 100 μm or more.
29. The light emitting device according to claim 25 , wherein the power supply line extends in the same direction as the source wiring.
30. An electronic device comprising the light emitting device according to claim 25 .
31. A light emitting device comprising:
a semiconductor layer;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a gate wiring over the first insulating film;
a second insulating film over the gate electrode;
a source wiring over the second insulating film;
a power supply line over the second insulating film;
a capacitor; and
a light emitting element,
wherein the semiconductor layer comprises a source region, a drain region, and a channel formation region,
wherein the gate electrode overlaps with the channel formation region,
wherein the light emitting element is electrically connected to one of the source region and the drain region,
wherein the power supply line is electrically connected to the other of the source region and the drain region,
wherein the power supply line overlaps with the gate electrode,
wherein the power supply line overlaps with the semiconductor layer,
wherein the source wiring overlaps with the semiconductor layer,
wherein the semiconductor layer comprises a part having a serpentine shape generally extending in a direction parallel to the gate wiring,
wherein the part is the channel formation region,
wherein the capacitor overlaps with the channel formation region, and
wherein the capacitor comprises the gate electrode as one electrode of the capacitor, the power supply line as the other electrode of the capacitor, and the second insulating film as a dielectric of the capacitor.
32. The light emitting device according to claim 31 , wherein a ratio of a channel width W of the channel formation region to a channel length L of the channel formation region is from 0.1 to 0.01.
33. The light emitting device according to claim 31 , further comprising:
a substrate,
wherein the light emitting element is provided over the substrate, and
wherein the light emitting element emits light to a substrate side.
34. The light emitting device according to claim 31 , wherein a channel length L of the channel formation region is 100 μm or more.
35. The light emitting device according to claim 31 , wherein the power supply line extends in the same direction as the source wiring.
36. An electronic device comprising the light emitting device according to claim 31 .