Semiconductor device and semiconductor wafer
To improve reliability of a semiconductor device obtained through a dicing step. In a ring region, a first outer ring is provided outside a seal ring, and a second outer ring is provided outside the first outer ring. This can prevent a crack from reaching even the seal ring that exists in the ring region, for example, when a scribe region located outside the ring region is cut off by a dicing blade.
1. A semiconductor device comprising a semiconductor chip,
the semiconductor chip including:
a circuit region in which an integrated circuit has been formed; and
a ring region formed outside the circuit region,
wherein in the ring region, there are formed:
(a) a semiconductor substrate;
(b) a seal ring formed over the semiconductor substrate;
(c) a surface protection film formed over the seal ring;
(d) a groove portion formed at the surface protection film, the groove portion being formed outside the seal ring;
(e) a first outer ring formed between the seal ring and the groove portion; and
(f) a second outer ring formed outside the first outer ring, the second outer ring being formed so as to overlap with the groove portion in plan view, and
wherein a top surface of the second outer ring is not exposed from a bottom surface of the groove portion.
2. The semiconductor device according to claim 1 , wherein an insulating film is interposed between a top surface of the second outer ring and the bottom surface of the groove portion.
3. The semiconductor device according to claim 1 , wherein a top surface of the first outer ring is higher than the top surface of the second outer ring.
4. The semiconductor device according to claim 1 , wherein the top surface of the first outer ring is directly in contact with the surface protection film.
5. The semiconductor device according to claim 4 , wherein the top surface of the first outer ring is higher than the bottom surface of the groove portion.
6. The semiconductor device according to claim 1 , wherein the top surface of the first outer ring is not directly in contact with the surface protection film.
7. The semiconductor device according to claim 6 , wherein
an insulating film is interposed between the top surface of the second outer ring and the bottom surface of the groove portion, and wherein
the groove portion penetrates the surface protection film, and is formed halfway through the insulating film.
8. The semiconductor device according to claim 7 , wherein the top surface of the first outer ring is higher than the bottom surface of the groove portion.
9. The semiconductor device according to claim 1 , wherein a first distance between the first outer ring and the groove portion is smaller than a second distance between the seal ring and the first outer ring.
10. The semiconductor device according to claim 9 ,
wherein the first distance is a distance between an outer peripheral line of the first outer ring and an inner peripheral side surface of the groove portion, and
wherein the second distance is a distance between an outer peripheral line of the seal ring and an inner peripheral line of the first outer ring.
11. The semiconductor device according to claim 1 , wherein a width of the first outer ring and a width of the second outer ring are smaller than a width of the seal ring.
12. The semiconductor device according to claim 1 , wherein a width of the second outer ring is larger than a width of the groove portion, and an outer peripheral line of the second outer ring is located more inside than an outer peripheral side surface of the groove portion.
13. The semiconductor device according to claim 1 , wherein a plurality of dummy patterns is arranged between the seal ring and the first outer ring.
14. The semiconductor device according to claim 13 , wherein
the semiconductor chip has a corner,
a first space between the seal ring and the first outer ring in the corner is larger than a second space between the seal ring and the first outer ring in a region other than the corner,
a plurality of corner reinforcing patterns is formed in the first space, and
the dummy patterns are formed in the second space.
15. The semiconductor device according to claim 14 ,
wherein each of the corner reinforcing patterns configures a line segment structure having a line segment shape in plan view, and
wherein in the first space, in plan view, a plurality of the line segment structures constituting the corner reinforcing patterns is formed side by side in an extending direction of a bisector while crossing the bisector of the corner.
16. The semiconductor device according to claim 15 , wherein the dummy patterns are further formed also between the corner reinforcing patterns and the first outer ring in the first space.
17. The semiconductor device according to claim 1 ,
wherein the seal ring is connected to the semiconductor substrate, and
wherein the first outer ring and the second outer ring are arranged above a field insulating film formed on the semiconductor substrate, and are formed spaced apart from the field insulating film.
18. The semiconductor device according to claim 1 , wherein a surface height of the semiconductor substrate connected to the seal ring is different from a surface height of the field insulating film located below the first outer ring and the second outer ring.
19. The semiconductor device according to claim 1 , wherein each of the first outer ring and the second outer ring includes a laminated structure including a plurality of metal patterns arranged in lamination so as to overlap with each other in plan view, and a plurality of plugs that mutually connects the metal patterns adjacent to each other in a lamination direction.
20. A semiconductor wafer comprising:
a plurality of chip regions; and
a scribe region that partitions the chip regions,
each of the chip regions having:
a circuit region in which an integrated circuit is formed; and
a ring region formed outside the circuit region, and
the scribe region existing outside the ring region,
wherein in the ring region, there are formed:
(a) a semiconductor substrate;
(b) a seal ring formed over the semiconductor substrate;
(c) a surface protection film formed over the seal ring;
(d) a groove portion formed at the surface protection film, the groove portion being formed outside the seal ring;
(e) a first outer ring formed between the seal ring and the groove portion; and
(f) a second outer ring formed outside the first outer ring, the second outer ring being formed to overlap with the groove portion in plan view, and wherein
a top surface of the second outer ring is not exposed from a bottom surface of the groove portion.