Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
1. A method of manufacturing a semiconductor device, comprising forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a first predetermined number of times, the cycle comprising:
forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate;
forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer; and
supplying a reaction gas to the substrate, the reaction gas being different from the first precursor gas and the second precursor gas.
2. A method of manufacturing a semiconductor device, comprising forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a first predetermined number of times, the cycle comprising:
forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate;
forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer;
modifying the second layer by supplying a reaction gas to the substrate, the reaction gas being different from the first precursor gas and the second precursor gas.
3. A method of manufacturing a semiconductor device, comprising forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a first predetermined number of times, the cycle comprising:
forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate;
forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer; and
forming a third layer having a carbon concentration lower than a carbon concentration of the second layer by supplying a reaction gas to the substrate and modifying the second layer, the reaction gas being different from the first precursor gas and the second precursor gas.
4. The method of claim 1 , wherein the reaction gas includes a nitriding gas.
5. The method of claim 1 , wherein the reaction gas includes a nitriding gas activated by heat.
6. The method of claim 1 , wherein the reaction gas includes a nitriding gas activated by plasma.
7. The method of claim 1 , wherein the reaction gas includes a gas containing nitrogen and carbon.
8. The method of claim 3 , wherein in the act of forming the thin film by performing the cycle the first predetermined number of times, the cycle performs in the following order:
alternately performing the act of forming the first layer and the act of forming the second layer a second predetermined number of times; and
the act of forming the third layer.
9. The method of claim 1 , wherein in the act of forming the first layer, a carbon-containing gas is supplied to the substrate together with the first precursor gas.
10. The method of claim 1 , wherein in the act of forming the second layer, a carbon-containing gas is supplied to the substrate together with the second precursor gas.
11. The method of claim 1 , wherein in the act of supplying the reaction gas, a carbon-containing gas is supplied to the substrate together with the reaction gas.
12. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:
forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate;
forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer; and
supplying a reaction gas to the substrate, the reaction gas being different from the first precursor gas and the second precursor gas.