METHOD AND APPARATUS FOR THREE DIMENSIONAL ION IMPLANTATION
A scan system for processing a substrate with an ion beam may include a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis.
1 . A scan system for processing a substrate with an ion beam, comprising:
a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and
a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis.
2 . The scan system of claim 1 , wherein the scanner deflects the ribbon beam through a range of angles about a third axis that is perpendicular to a substrate plane defined by the substrate, wherein the ribbon beam impacts the substrate over an ion angular distribution about the third axis.
3 . The scan system of claim 1 , wherein the scanner comprises a first scan plate and a second scan plate, wherein the ribbon beam is transmitted between the first scan plate and second scan plate.
4 . The scan system of claim 3 , wherein the scan power supply comprises a first power supply to apply a first waveform to the first scan plate and a second power supply to apply a second waveform to the second scan plate, wherein the first and second waveform generate the deflecting field as an oscillating deflecting field.
5 . The scan system of claim 4 , wherein the scan power supply is configured to output a signal to adjust at least one of: a first amplitude of the first waveform and a second amplitude of the second waveform.
6 . The scan system of claim 4 , wherein the second waveform has a phase lag of 180 degrees with respect to the first waveform.
7 . The scan system of claim 2 , wherein the range of angles is +/−45 degrees about the third axis.
8 . The scan system of claim 2 , wherein the ion angular distribution has two separate peaks.
9 . The scan system of claim 1 , wherein the scanner is configured to generate the deflecting field as an oscillating deflecting field having an oscillation frequency greater than 100 Hz.
10 . An ion implanter for implanting a substrate, comprising:
an ion source to generate an ion beam;
at least one beamline component to shape the ion beam into a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the beam width, the beam width being at least three times greater than the beam height; and
a scan system to transmit the ribbon beam and to apply a deflecting field to the ribbon beam along the second axis, wherein the ribbon beam impacts the substrate over an ion angular distribution about a third axis perpendicular to a substrate plane defined by the substrate.
11 . The ion implanter of claim 10 , wherein the scan system comprises:
a first scan plate and a second scan plate disposed between the at least one beamline component and a substrate stage that supports the substrate, wherein the ribbon beam is transmitted between the first scan plate and second scan plate; and
a first power supply to apply a first waveform to the first scan plate and a second power supply
to apply a second waveform to the second scan plate.
12 . The ion implanter of claim 11 , wherein the scan system is configured to output a signal to adjust at least one of: a first amplitude of the first waveform and a second amplitude of the second waveform.
13 . The ion implanter of claim 11 , wherein the scan system is configured to output a signal to adjust a first shape of the first waveform, a second shape of the second waveform, or both.
14 . The ion implanter of claim 10 , further comprising a substrate stage configured to scan the substrate parallel to the second axis.
15 . The ion implanter of claim 14 , wherein the scan system is configured to generate the deflecting field as an oscillating deflecting field having an oscillation frequency greater than 100 Hz, and wherein the substrate stage is configured to scan the substrate back and forth parallel to the second axis at a frequency less than 2 Hz.
16 . The ion implanter of claim 10 , wherein the at least one beamline component comprises a spot beam scanner configured to receive a spot ion beam and generate the ribbon beam by scanning the spot beam along a third axis that is perpendicular to the second axis.
17 . The ion implanter of claim 10 , wherein the scan system comprises a magnetic scanner.
18 . A method to process a substrate using an ion beam, comprising:
shaping the ion beam into a ribbon beam having a beam width along a first axis and beam height along a second axis perpendicular to the first axis, the beam width being at least three times greater than the beam height;
directing the ribbon beam to pass through a scanner; and
applying a deflecting field to the ribbon beam along the second axis when the ribbon beam passes through the scanner.
19 . The method of claim 18 , further comprising applying the deflecting field to deflect the ribbon beam through a range of angles about a third axis that is perpendicular to a substrate plane defined by the substrate, wherein the ribbon beam impacts a substrate over an ion angular distribution about the third axis.
20 . The method of claim 18 , wherein the scanner comprises a first scan plate and a second scan plate, the method further comprising:
applying a first waveform to the first scan plate; and
applying a second waveform to the second scan plate, wherein the first and second waveform generate the deflecting field as an oscillating deflecting field parallel to the second axis.