Plasma etching method
View Patent ↗In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.
1. A plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above said first magnetic film, a metal oxide film disposed between said first magnetic film and said second magnetic film, a second metal film disposed over said second magnetic film and forming an upper electrode, and a first metal film disposed below said first magnetic film and forming a lower electrode, said plasma etching method comprising the steps of:
a first process for etching said first magnetic film, said metal oxide film, and said second magnetic film by using carbon monoxide gas, with said second metal film as a mask; and
a second process for etching said sample by using mixed gas of hydrogen gas and inactive gas after the first process,
wherein said second metal film is a film containing therein tantalum, and
said first process includes a first etching step and a second etching step which is carried out after said first etching step, and a bias RF electric power in said second etching step is less than a bias RF electric power in said first etching step.
2. The plasma etching method according to claim 1 , wherein a bias RF electric power in said second process for etching said sample is greater than a respective bias RF electric power in each of said first and second etching steps of said first etching process.
3. The plasma etching method according to claim 1 , wherein before said first process, said second metal film is etched by using mixed gas of tetrafluoromethane gas and argon gas.
4. The plasma etching method according to claim 3 , wherein said first process further uses ammonia gas, and said first metal film is a film containing therein tantalum, and the inactive gas used in the second process is argon gas.
5. The plasma etching method according to claim 1 , wherein said first process and said second process are carried out in the same processing chamber.
6. The plasma etching method according to claim 1 , wherein transition from said first process to said second process is carried out in a state in which the plasma is continuously generated.
7. The plasma etching method according to claim 1
wherein a total processing time in said second process is shorter than a total processing time in said first process.
8. The plasma etching method according to claim 2 , wherein a total processing time in said second process is shorter than a total processing time in said first process.
9. The plasma etching method according to claim 3 , wherein a total processing time in said second process is shorter than a total processing time in said first process.
10. The plasma etching method according to claim 4 , wherein a total processing time in said second process is shorter than a total processing time in said first process.
11. The plasma etching method according to claim 5 , wherein a total processing time in said second process is shorter than a total processing time in said first process.
12. The plasma etching method according to claim 6 , wherein a total processing time in said second process is shorter than a total processing time in said first process.