Magneto-electric voltage controlled spin transistors
The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS 2 , WS 2 , MoSe 2 , WSe 2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
1. A magneto-electric spin field effect transistor (spin-FET) comprising:
a layer of a magneto-electric gate dielectric,
a thin film of a conductive channel material selected from the group consisting of graphene, InP, GaSb, PbS, MoS 2 , WS 2 , MoSe 2 , WSe 2 and mixtures thereof;
wherein said magneto-electric gate film and said channel material are in intimate contact along an interface there between,
a source and drain disposed in electrical contact with said thin film of channel material.
2. The spin-FET of claim 1 , wherein said film of a magneto-electric dielectric is comprised of chromia, Fe 2 TeO 6 or LuFeO 3 .
3. The spin-FET of claim 2 , wherein said layer of magneto-electric dielectric is comprised of chromia.
4. The spin-FET of claim 1 , where no refresh current is required to retain the last state written.
5. The spin-FET of claim 4 which is a transistor which is susceptible to separated read and write operations.
6. The spin-FET of claim 4 that combines memory and logic operations.
7. The spin-FET of claim 1 with multistate logic.
8. The spin-FET of claim 7 , wherein both spin and current of said spin-FET is voltage controlled.