Plasma processing apparatus and plasma processing method
View Patent ↗In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.
1. A plasma processing apparatus comprising:
a vacuum chamber;
a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in the vacuum chamber;
a sample stage disposed in the vacuum chamber on which a sample is mounted;
a second radio-frequency power supply which supplies second radio-frequency power to the sample stage;
a matching box which performs matching for suppressing reflection of the second radio-frequency power; and
a control part,
wherein the control part is configured to cause the matching box to conduct sampling of information when the first radio-frequency power and the second radio-frequency power are time-modulated, the sampling of information being used for performing the matching during a sampling effective period which is from a point of time after elapse of a prescribed time, which is determined based on a parameter related to time-modulated plasma density, until an end of on-state of the time-modulated second radio-frequency power,
wherein the control part is configured to cause the matching box not to conduct the sampling of information for performing the matching during the prescribed time starting from a beginning of on-state of the time-modulated second radio-frequency power, and
wherein the control part is configured to obtain the sampling effective period based on a frequency of time-modulation of the second radio-frequency power, a duty ratio of time-modulation of the second radio-frequency power, and the prescribed time.
2. The plasma processing apparatus according to claim 1 , wherein the control part is configured to obtain the prescribed time based on a time required to stabilize Vpp which is a peak-to-peak value of the second radio-frequency power.
3. The plasma processing apparatus according to claim 1 , wherein the control part is configured to obtain the prescribed time based on a time required to stabilize emission intensity of the plasma.
4. The plasma processing apparatus according to claim 1 , wherein the control part is configured to cause the second radio-frequency power to be time-modulated at a frequency of an integral multiple of a frequency of the sampling.
5. The plasma processing apparatus according to claim 1 , wherein the control part is configured to cause the matching box to maintain a matching state attained during the sampling effective period from after an end of the sampling effective period until a next sampling effective period.
6. A plasma processing apparatus comprising:
a vacuum chamber;
a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in the vacuum chamber;
a sample stage disposed in the vacuum chamber on which a sample is mounted;
a second radio-frequency power supply which supplies second radio-frequency power to the sample stage;
a matching box which performs matching for suppressing reflection of the second radio-frequency power; and
a control part,
wherein the control part is configured to cause the matching box to conduct sampling of information when the first radio-frequency power and the second radio-frequency power are time-modulated, the sampling of information being used for performing the matching during a sampling effective period which is from a point of time after elapse of a prescribed time period, during which the sampling of information for performing the matching is not conducted, until an end of on-state of the time-modulated second radio-frequency power,
wherein the control part is further configured to obtain the prescribed time starting from a beginning of on-state of the time-modulated second radio-frequency power by subtracting the sampling effective time, which is determined in advance, from a time of the on-state of the time-modulated second radio-frequency power obtained from a frequency of time-modulation of the second radio-frequency power and a duty ratio of time-modulation of the second radio-frequency power.
7. The plasma processing apparatus according to claim 6 , wherein the control part is configured to cause the second radio-frequency power to be time-modulated at a frequency of an integral multiple of a frequency of the sampling.
8. The plasma processing apparatus according to claim 7 , wherein the control part is configured to cause the matching box to maintain a matching state attained during the sampling effective period from after an end of the sampling effective period until a next sampling effective period.
9. The plasma processing apparatus according to claim 6 , wherein the control part is configured to cause the matching box to maintain a matching state attained during the sampling effective period from after an end of the sampling effective period until a next sampling effective period.