Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, the method comprising forming a film containing a predetermined element and carbon on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:

supplying a first process gas containing the predetermined element and a halogen element to the substrate in the process chamber;

supplying a second process gas containing carbon and nitrogen to the substrate in the process chamber;

supplying a third process gas containing carbon to the substrate in the process chamber, the third process gas being different from the second process gas; and

supplying a fourth process gas to the substrate in the process chamber, the fourth process gas being different from each of the first to the third process gases,

wherein the cycle comprises performing the act of supplying the third process gas in a period in which the second gas is supplied.

2. A method of manufacturing a semiconductor device, the method comprising forming a film containing a predetermined element and carbon on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:

supplying a first process gas containing the predetermined element and a halogen element to the substrate in the process chamber;

supplying a second process gas containing carbon and nitrogen to the substrate in the process chamber;

supplying a third process gas containing carbon to the substrate in the process chamber, the third process gas being different from the second process gas; and

supplying a fourth process gas to the substrate in the process chamber, the fourth process gas being different from each of the first to the third process gases,

wherein the cycle comprises performing the act of supplying the third process gas in a period in which supply of the second process gas is stopped.

3. The method of claim 1 , wherein the cycle comprises performing the act of supplying the third process gas concurrently with the act of supplying the second process gas.

4. A method of manufacturing a semiconductor device, the method comprising forming a film containing a predetermined element and carbon on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:

supplying a first process gas containing the predetermined element and a halogen element to the substrate in the process chamber;

supplying a second process gas containing carbon and nitrogen to the substrate in the process chamber;

supplying a third process gas containing carbon to the substrate in the process chamber, the third process gas being different from the second process gas; and

supplying a fourth process gas to the substrate in the process chamber, the fourth process gas being different from each of the first to the third process gases,

wherein the cycle comprises performing the act of supplying the third process gas prior to the act of supplying the second process gas.

5. A method of manufacturing a semiconductor device, the method comprising forming a film containing a predetermined element and carbon on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:

supplying a first process gas containing the predetermined element and a halogen element to the substrate in the process chamber;

supplying a second process gas containing carbon and nitrogen to the substrate in the process chamber;

supplying a third process gas containing carbon to the substrate in the process chamber, the third process gas being different from the second process gas; and

supplying a fourth process gas to the substrate in the process chamber, the fourth process gas being different from each of the first to the third process gases,

wherein the cycle comprises performing the act of supplying the third process gas after ending the act of supplying the second process gas.

6. The method of claim 2 , wherein an internal pressure of the process chamber in the act of performing the act of supplying the third process gas in the period in which the supply of the second process gas is stopped is greater than an internal pressure of the process chamber in the act of supplying the second process gas.

7. The method of claim 4 , wherein an internal pressure of the process chamber in the act of performing the act of supplying the third process gas prior to the act of supplying the second process gas is greater than an internal pressure of the process chamber in the act of supplying the second process gas.

8. The method of claim 5 , wherein an internal pressure of the process chamber in the act of performing the act of supplying the third process gas after ending the act of supplying the second process gas is greater than an internal pressure of the process chamber in the act of supplying the second process gas.

9. The method of claim 1 , wherein a carbon concentration in the film is controlled by controlling a supply condition in the act of supplying the third process gas.

10. The method of claim 1 , wherein the second process gas comprises a gas composed of three elements of carbon, nitrogen, and hydrogen and having more carbon atoms than nitrogen atoms in one molecule.

11. The method of claim 1 , wherein the second process gas comprises a gas having a plurality of ligands containing carbon atoms in one molecule.

12. The method of claim 1 , wherein the second process gas comprises at least one selected from a group consisting of amine and organic hydrazine.

13. The method of claim 1 , wherein the third process gas comprises a hydrocarbon-based gas.

14. The method of claim 1 , wherein the fourth process gas comprises at least one selected from a group consisting of an oxidizing gas and a nitriding gas.

15. The method of claim 1 , wherein the predetermined element comprises silicon or metal and the halogen element comprises chlorine or fluorine.

16. The method of claim 1 , wherein a film containing the predetermined element, oxygen, carbon, and nitrogen or a film containing the predetermined element, oxygen, and carbon is formed as the film by supplying an oxidizing gas as the fourth process gas.

17. The method of claim 1 , wherein a film containing the predetermined element, carbon, and nitrogen is formed as the film by supplying a nitriding gas as the fourth process gas.

18. A substrate processing apparatus comprising:

a process chamber configured to accommodate a substrate;

first gas supply system configured to supply a first process gas containing a predetermined element and a halogen element into the process chamber;

second gas supply system configured to supply a second process gas containing carbon and nitrogen into the process chamber;

a third gas supply system configured to supply a third process gas containing carbon into the process chamber, the third process gas being different from the second process gas;

fourth gas supply system configured to supply a fourth process gas into the process chamber, the fourth process gas being different from each of the first to the third process gases; and

control unit configured to control the first to the fourth gas supply systems to form a film containing the predetermined element and carbon on the substrate by performing a cycle a predetermined number of times, the cycle comprising:

supplying the first process gas to the substrate in the process chamber;

supplying the second process gas to the substrate in the process chamber;

supplying the third process gas to the substrate in the process chamber; and

supplying the fourth process gas to the substrate in the process chamber,

wherein the cycle comprises performing the act of supplying the third process gas in a period in which the second gas is supplied.

19. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a film containing a predetermined element and carbon on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:

supplying a first process gas containing the predetermined element and a halogen element to the substrate in the process chamber;

supplying a second process gas containing carbon and nitrogen to the substrate in the process chamber;

supplying a third process gas containing carbon to the substrate in the process chamber, the third process gas being different from the second process gas; and

supplying a fourth process gas to the substrate in the process chamber, the fourth process gas being different from each of the first to the third process gases,

wherein the cycle comprises performing the act of supplying the third process gas in a period in which the second gas is supplied.