IP Library Granted Patent US 9,318,266
Granted Patent B2
US 9,318,266 · App. 14/190,353 · Granted Apr 19, 2016

Electrostrictive resonance suppression for tunable capacitors

Inventors: Mircea Capanu (St. Catharines, CA); Andrew Vladimir Claude Cervin (Oakville, CA); Marina Zelner (Burlington, CA)
Assignee: BLACKBERRY LIMITED
H01G5/38H01G7/06H01L27/016H01L28/60H01G7/02H01L27/0808
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Quick Facts
Patent No.
US 9,318,266
App. No.
14/190,353
Granted
Apr 19, 2016
Kind
B2
Abstract

A multi-layered capacitor includes three or more capacitor layers. A first layer includes a first DC-biased, tunable capacitor. A second layer, acoustically coupled to the first layer, includes a second DC-biased, tunable capacitor. A third layer, acoustically coupled to the second layer, includes a third DC-biased, tunable capacitor. Each dielectric of the first, second, and third capacitors has a resonance of about the same frequency, within 5%, and inner electrodes of the first, second, and third capacitors have a resonance of about the same frequency, within 5%. The resonance of each layer is a function of at least thickness, density, and material. The first, second, and third layers are biased to generate destructive acoustic interference, and the multi-layer capacitor is operable at frequencies greater than 0.1 GHz.

Claims (35)

1. A mobile device for providing wireless communications, the mobile device comprising:

one or more electronic radio frequency components; and

a multi-layer capacitor in communication with the one or more radio frequency components, wherein the multi-layer capacitor comprises:

a first layer comprising a first tunable capacitor;

a second layer that is acoustically coupled to and positioned over the first layer, wherein the second layer comprises a second tunable capacitor, wherein the first and second tunable capacitors share a first common electrode;

a third layer that is acoustically coupled to and positioned over the second layer, wherein the third layer comprises a third tunable capacitor, wherein the second and third tunable capacitors share a second common electrode,

wherein the first, second and third tunable capacitors are biased to generate destructive acoustic interference,

wherein a total number of positively DC-biased dielectric layers of the multi-layer capacitor is not equal to a total number of negatively DC-biased dielectric layers of the multi-layer capacitor,

wherein one of a bottom electrode of the first tunable capacitor or a top electrode of the third tunable capacitor is unbiased, and

wherein the other of the bottom electrode of the first tunable capacitor or the top electrode of the third tunable capacitor is biased.

2. The mobile device of claim 1 , wherein each dielectric of the first, second and third tunable capacitors has a resonance frequency within 5% of each other.

3. The mobile device of claim 1 , wherein each of the first and second common electrodes have a resonance frequency within 5% of each other.

4. The mobile device of claim 1 , wherein the multi-layer capacitor is a thin-film capacitor having a mesa capacitor structure, wherein the resonance frequency of each of the first, second and third layers is a function of at least one of thickness, density or material, and wherein the multi-layer capacitor is operable at frequencies greater than 0.1 GHz.

5. The mobile device of claim 1 , wherein each of the first, second and third layers has a thickness within 20% of each other, and wherein each of the first, second and third layers has a density within 5% of each other.

6. The mobile device of claim 1 , wherein at least one of the first, second or third layers is of a different material from the other of the first, second and third layers.

7. The mobile device of claim 1 , wherein at least one of the first, second or third layers has a different thickness and a different density from the other of the first, second and third layers.

8. The mobile device of claim 1 , wherein the multi-layer capacitor further comprises two or more additional layers that each comprise an additional tunable capacitor, and wherein the first, second and third layers comprise a dielectric including a high-K pyrochlore or perovskite material.

9. The mobile device of claim 8 , wherein the dielectric comprises barium strontium titanium oxide.

10. The mobile device of claim 1 , wherein the bottom electrode of the first tunable capacitor is formed directly on an insulating layer having a surface roughness of less than or equal to 0.08 micrometers.

11. The mobile device of claim 1 , wherein the multi-layer tunable capacitor has a substantially linear capacitance within a frequency range of 0.1 to 40 GHz.

12. The mobile device of claim 1 , wherein the one or more electronic radio frequency components include a receiver and a power amplifier, and wherein the multi-layer capacitor is positioned in a matching network.

13. A mobile device for providing wireless communications, the mobile device comprising:

one or more electronic radio frequency components including a receiver; and

a multi-layer capacitor in communication with the one or more radio frequency components, wherein the multi-layer capacitor comprises:

a plurality of dielectric layers forming tunable capacitors that are positioned over each other and that are alternately DC-biased with positive and negative DC bias, wherein a total number of the tunable capacitors is odd, wherein pairs of the plurality of dielectric layers share a common electrode and are acoustically coupled, wherein the tunable capacitors are DC-biased to generate destructive acoustic interference, wherein one of a bottom electrode of a bottom tunable capacitor or a top electrode of a top tunable capacitor is unbiased, and wherein the other of the bottom electrode of the bottom tunable capacitor or the top electrode of the top tunable capacitor is biased.

14. The mobile device of claim 13 , wherein the multi-layer tunable capacitor has a substantially linear capacitance within a frequency range of 0.1 to 40 GHz.

15. The mobile device of claim 13 , wherein the bottom electrode of the bottom capacitor is formed directly on an insulating layer having a surface roughness of less than or equal to 0.08 micrometers.

16. The mobile device of claim 13 , wherein each of the plurality of dielectric layers has a resonance frequency within 5% of each other.

17. The mobile device of claim 13 , wherein each of the common electrodes has a resonance frequency within 5% of each other.

18. The mobile device of claim 13 , wherein the multi-layer capacitor has a Q factor of 20 or greater at an entire range of frequencies from 1.5 to 40 GHz.

19. A mobile device for providing wireless communications, the mobile device comprising:

one or more electronic radio frequency components including a receiver; and

a matching network comprising a multi-layer capacitor, the matching network being connected with the one or more radio frequency components, the multi-layer capacitor comprising:

a plurality of dielectric layers forming tunable capacitors that are positioned over each other and that are alternately DC-biased with positive and negative DC bias, wherein a total number of the tunable capacitors is odd, wherein pairs of the plurality of dielectric layers share a common electrode and are acoustically coupled, wherein the tunable capacitors are DC-biased to generate destructive acoustic interference, wherein one of a bottom electrode of a bottom tunable capacitor or a top electrode of a top tunable capacitor is unbiased, and wherein the other of the bottom electrode of the bottom tunable capacitor or the top electrode of the top tunable capacitor is biased.

20. The mobile device of claim 19 , wherein the multi-layer capacitor has a substantially linear capacitance within a frequency range of 0.1 to 40 GHz and wherein the bottom electrode of the bottom capacitor is formed directly on an insulating layer.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2020
From: BLACKBERRY LIMITED
To: NXP USA, INC.
Reel/Frame 052095/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2014
From: RESEARCH IN MOTION RF, INC.
To: RESEARCH IN MOTION CORPORATION
Reel/Frame 032332/0604 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2014
From: RESEARCH IN MOTION CORPORATION
To: BLACKBERRY LIMITED
Reel/Frame 032332/0642 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2014
From: CAPANU, MIRCEA; CERVIN-LAWRY, ANDREW; ZELNER, MARINA
To: GENNUM CORPORATION
Reel/Frame 032312/0961 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2014
From: GENNUM CORPORATION
To: PARATEK MICROWAVE, INC.
Reel/Frame 032312/0971 →
CHANGE OF NAME Recorded Feb 27, 2014
From: PARATEK MICROWAVE, INC.
To: RESEARCH IN MOTION RF, INC.
Reel/Frame 032364/0310 →
Continuity (3)
Continuation 13467641 · May 9, 2012
Continuation 12407802 · Mar 20, 2009
Related Publication 20140240893A1 · Aug 28, 2014