Semiconductor device, semiconductor stacked module structure, stacked module structure and method of manufacturing same
A semiconductor device, having an insulating substrate; a semiconductor element which is mounted on one main surface of the insulating substrate via adhesive, with an element circuit surface of the semiconductor element facing upwards; a first insulating material layer which seals the element circuit surface of the semiconductor element and the insulating substrate peripheral thereto; a first metal thin film wire layer which is provided on the first insulating material layer (A) and a portion of which is exposed to an external surface; a first insulating material layer (B) which is provided on the first metal thin film wire layer; a second insulating material layer which is provided on a main surface of the insulating substrate where the semiconductor element is not mounted; and a second metal thin film wire layer which is provided inside the second insulating material layer.
1. A semiconductor device, having:
an insulating substrate;
a semiconductor element which is mounted on one main surface of the insulating substrate via adhesive, with an element circuit surface of the semiconductor element facing upwards;
a first insulating material layer (A) which seals the element circuit surface of the semiconductor element and the insulating substrate peripheral thereto;
a first metal thin film wire layer which is provided on the first insulating material layer (A) and a portion of which is exposed to an external surface;
a first insulating material layer (B) which is provided on the first metal thin film wire layer;
a second insulating material layer which is provided on a main surface of the insulating substrate where the semiconductor element is not mounted;
a second metal thin film wire layer which is provided inside the second insulating material layer and a portion of which is exposed to an external surface;
a via which passes through the insulating substrate and which electrically connects the first metal thin film wire layer in the first insulating material layer (A) and the second metal thin film wire layer; and
an external electrode which is formed on the first metal thin film wire layer, the semiconductor device having a structure in which the second metal thin film wire layer, an electrode arranged on the element circuit surface of the semiconductor element, the first metal thin film wire layer, the via and the external electrode formed on the first metal thin film wire layer are electrically connected.
2. The semiconductor device according to claim 1 , wherein the first insulating material layer (A) and the first insulating material layer (B) are insulating materials different from each other.
3. The semiconductor device according to claim 1 , having a first metal thin film wire layer which is electrically connected to the second metal thin film wire layer and is not electrically connected to the semiconductor element.
4. The semiconductor device according to claim 1 , wherein a plurality of the first metal thin film wire layers are provided, and a plurality of the vias which establish connection between the plurality of the first metal thin film wire layers are provided.
5. The semiconductor device according to claim 1 , having a plurality of the semiconductor elements on the insulating substrate.
6. A semiconductor stacked module structure, wherein a plurality of the semiconductor devices according to claim 1 are stacked in a direction perpendicular to main flat surfaces of the semiconductor devices, by connecting an external electrode formed on the first metal thin film wire layer of a semiconductor device and an exposed portion on the second metal thin film wire layer of another semiconductor device.
7. A stacked module structure, wherein the structure is formed by stacking at least one or more other semiconductor device or electronic component, which is electrically connected to an exposed portion on the second metal thin film wire layer of the semiconductor device according to claim 1 .
8. A method of manufacturing a semiconductor stacked module structure, wherein
using a plurality of semiconductor devices according to claim 1 , said one or more semiconductor devices are stacked in a direction perpendicular to main flat surfaces of the semiconductor devices, by electrically connecting the external electrode formed on the first metal thin film wire layer of one of the semiconductor devices with the second metal thin film wire layer exposed on the insulating substrate of another one of the semiconductor devices.
9. A method of manufacturing a stacked module structure, wherein one or more other semiconductor device and/or electronic component is stacked in a direction perpendicular to main flat surfaces of the semiconductor devices, by electrically connecting the other semiconductor device or electronic component to the exposed portion on the second metal thin film wire layer of the semiconductor device according to claim 1 .