System to control a width of a programming threshold voltage distribution width when writing hot-read data

1. An apparatus comprising:

a memory configured to store data, the memory comprising a plurality of memory modules each having a size less than a total size of the memory; and

a controller configured to (A) process a plurality of read/write operations and (B) write the data using a plurality of threshold voltages, wherein (i) data considered hot-read data is written using a first voltage threshold, (ii) data not considered hot-read data is written using a second voltage threshold, and (iii) the first voltage threshold reduces an impact on endurance of the memory.

2. The apparatus according to claim 1 , wherein the first voltage threshold results in faster reads, fewer read retries, less recycling of hot-read data, and saves power when reading from the memory.

3. The apparatus according to claim 1 , wherein the threshold voltages are implemented using incremental step pulse programming.

4. The apparatus according to claim 1 , wherein a voltage pulse width distribution of the first voltage threshold is narrower than a voltage pulse width distribution of the second voltage threshold.

5. The apparatus according to claim 1 , wherein the first voltage threshold is generated using slow programming.

6. The apparatus according to claim 5 , wherein the slow programming of the memory occurs during an idle time.

7. The apparatus according to claim 5 , wherein the slow programming of the memory occurs during a garbage collection state.

8. The apparatus according to claim 5 , wherein the slow programming of the memory occurs during a data recycling state.

9. The apparatus according to claim 5 , wherein the slow programming does not affect the performance of the apparatus.

10. The apparatus according to claim 5 , wherein the data is read from an original location if the hot-read data is read during the slow programming.

11. The apparatus according to claim 1 , wherein the controller calculates the hot-read data by keeping track of a number of read operations on the memory during data reading operations and determines if the number of read operations is above a threshold value.

12. The apparatus according to claim 11 , wherein the data is classified as hot-read data if the number of read operations is above the threshold value and is classified as non hot-read data if the number of read operations is not above the threshold value.

13. The apparatus according to claim 11 , wherein the controller selects the hottest subset of hot-read data for recycling with distribution width control when hot-read data is above a predetermined amount.

14. A method for controlling a solid state drive, comprising the steps of:

configuring a memory to store data, the memory comprising a plurality of memory modules each having a size less than a total size of the memory;

processing a plurality of read/write operations; and

writing the data using a plurality of threshold voltages, wherein (i) data considered hot-read data is written using a first voltage threshold, (ii) data not considered hot-read data is written using a second voltage threshold, and (iii) the first voltage threshold reduces an impact on endurance of the memory.

15. An apparatus comprising:

a memory configured to store data, the memory comprising a plurality of memory modules each having a size less than a total size of the memory; and

means for (A) processing a plurality of read/write operations and (B) writing the data using a plurality of threshold voltages, wherein (i) data considered hot-read data is written using a first voltage threshold, (ii) data not considered hot-read data is written using a second voltage threshold, and (iii) the first voltage threshold reduces an impact on endurance of the memory.