Solid-state imaging device and method of manufacturing the same

1. A solid-state imaging device comprising:

a semiconductor layer in which a plurality of photoelectric conversion elements are arranged in a two-dimensional array;

a reflector that covers a surface of the semiconductor layer on a side opposite to a surface of the semiconductor layer on which light is incident, and that reflects the light incident thereon;

an element separating region formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements, the element separating region extending from the surface of the semiconductor layer on which light is incident to the reflector and having a plurality of reflection surfaces for reflecting light; and

a voltage supply circuit that is configured to supply a negative voltage and is electrically connected to the element separating region, wherein

the reflector is formed of a conductive member and the element separating region includes a conductive member, and

the reflector and the element separating region are electrically connected so that the reflector is electrically connected to the voltage supply circuit through the element separation region.

2. The solid-state imaging device according to claim 1 , wherein the conductive member of the element separating region includes the reflection surfaces, and the element separating region also includes a plurality of insulating films.

3. The solid-state imaging device according to claim 1 , further comprising:

an interlayer insulation film disposed between the reflector and the surface of the semiconductor layer on the side opposite to the surface of the semiconductor layer on which the light is incident; and

a read transistor configured to read a charge from one of the photoelectric conversion elements, a gate of the read transistor being disposed in the interlayer insulation film.

4. The solid-state imaging device according to claim 1 , further comprising a plurality of microlenses, each disposed over one of the photoelectric conversion elements.

5. The solid-state imaging device according to claim 4 , further comprising a plurality of color filters, each disposed between one of the microlenses and one of the photoelectric conversion elements.

6. The solid-state imaging device according to claim 5 , further comprising a plurality of waveguides, each disposed between one of the color filters and one of the photoelectric conversion elements.

7. The solid-state imaging device according to claim 1 , wherein the conductive member of the element separating region is in contact with the reflector.

8. The solid-state imaging device according to claim 2 , wherein each of the insulating films is disposed around one of the photoelectric conversion elements.

9. The solid-state imaging device according to claim 1 , wherein the conductive member of the element separate region is formed of metal.

10. The solid-state imaging device according to claim 1 , wherein the conductive member of the reflector is formed of metal.

11. A solid-state imaging device comprising:

a semiconductor layer in which a plurality of photoelectric conversion elements are arranged in a two-dimensional array;

a reflector that covers a surface of the semiconductor layer on a side opposite to a surface of the semiconductor layer on which light is incident, and that reflects the light incident thereon;

an element separating region formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements, the element separating region extending from the surface of the semiconductor layer on which light is incident to the reflector and having a plurality of reflection surfaces for reflecting light; and

a voltage supply circuit electrically connected to the element separating region and the reflector separately and configured to supply a negative voltage thereto.

12. The solid-state imaging device according to claim 11 , wherein the element separating region includes a conductive member that includes the reflection surfaces and a plurality of insulating films.

13. The solid-state imaging device according to claim 12 , wherein each of the insulating films is disposed around one of the photoelectric conversion elements.

14. The solid-state imaging device according to claim 12 , wherein each of the insulating films is disposed between the conductive member and the reflector.

15. The solid-state imaging device according to claim 12 , wherein the conductive member of the element separate region is formed of metal.

16. The solid-state imaging device according to claim 12 , wherein the reflector is formed of metal.

17. The solid-state imaging device according to claim 11 , further comprising:

an interlayer insulation film disposed between the reflector and the surface of the semiconductor layer on the side opposite to the surface of the semiconductor layer on which the light is incident; and

a read transistor configured to read a charge from one of the photoelectric conversion elements, a gate of the read transistor being disposed in the interlayer insulation film.

18. The solid-state imaging device according to claim 11 , further comprising a plurality of microlenses, each disposed over one of the photoelectric conversion elements.

19. The solid-state imaging device according to claim 18 , further comprising a plurality of color filters, each disposed between one of the microlenses and one of the photoelectric conversion elements.

20. The solid-state imaging device according to claim 19 , further comprising a plurality of waveguides, each disposed between one of the color filters and one of the photoelectric conversion elements.