Film forming method and recording medium for performing the method

1. A method of manufacturing a semiconductor device, comprising:

treating a surface of an insulating film formed on a substrate by supplying a first precursor containing a predetermined element and a halogen group to the substrate; and

forming a thin film containing the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor containing the predetermined element and a halogen group to the substrate; and supplying a third precursor to the substrate,

wherein in the act of treating the surface of the insulating film, a seed layer containing the halogen group is formed on the surface of the insulating film.

2. The method of claim 1 , wherein a supply time of the first precursor is set to be longer than a supply time of the second precursor per the cycle.

3. The method of claim 1 , wherein a flow rate of the first precursor is set to be greater than a flow rate of the second precursor.

4. The method of claim 1 , wherein a pressure of a space where the substrate exists when supplying the first precursor is set to be higher than a pressure of a space where the substrate exists when supplying the second precursor.

5. The method of claim 1 , wherein in the act of treating the surface of the insulating film, a seed layer is formed on the surface of the insulating film.

6. The method of claim 1 , wherein in the act of treating the surface of the insulating film, a seed layer containing the halogen group and the predetermined element is formed on the surface of the insulating film.

7. The method of claim 1 , wherein the third precursor includes at least one of a nitrogen-containing gas, an oxygen-containing gas, a hydrogen-containing gas, a carbon-containing gas, a carbon and nitrogen-containing gas, and a boron-containing gas.

8. The method of claim 1 , wherein the halogen group includes a chloro group or a fluoro group.

9. The method of claim 1 , wherein the insulating film includes at least one of an oxide film, a nitride film, and an oxynitride film.

10. The method of claim 1 , wherein the predetermined element includes a semiconductor element or a metal element.

11. A method of manufacturing a semiconductor device, comprising:

treating a surface of an insulating film formed on a substrate by supplying a first precursor containing a predetermined element and a halogen group to the substrate; and

forming a thin film containing the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor containing the predetermined element and a halogen group to the substrate; and supplying a third precursor to the substrate,

wherein the first precursor and the second precursor comprises the same substance.

12. A method of manufacturing a semiconductor device, comprising:

treating a surface of an insulating film formed on a substrate by supplying a first precursor containing a predetermined element and a halogen group to the substrate; and

forming a thin film containing the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor containing the predetermined element and a halogen group to the substrate; and supplying a third precursor to the substrate,

wherein in the act of treating the surface of the insulating film, a seed layer is formed on the surface of the insulating film, and

wherein a thickness of the seed layer is 0.5 to 2 Å.

13. A method of manufacturing a semiconductor device, comprising:

treating a surface of an insulating film formed on a substrate by supplying a first precursor containing a predetermined element and a halogen group to the substrate; and

forming a thin film containing the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor containing the predetermined element and a halogen group to the substrate; and supplying a third precursor to the substrate,

wherein the third precursor contains the predetermined element and an amino group.

14. The method of claim 13 ,

wherein the thin film is composed of the predetermined element.

15. A method of manufacturing a semiconductor device, comprising:

treating a surface of an insulating film formed on a substrate by supplying a first precursor containing a predetermined element and a halogen group to the substrate; and

forming a thin film containing the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor containing the predetermined element and a halogen group to the substrate; and supplying a third precursor to the substrate,

wherein the third precursor contains one amino group in one molecule.

16. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of:

treating a surface of an insulating film formed on a substrate by supplying a first precursor containing a predetermined element and a halogen group to the substrate in a process chamber; and

forming a thin film containing the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor containing the predetermined element and a halogen group to the substrate in the process chamber; and supplying a third precursor to the substrate in the process chamber,

wherein in the act of treating the surface of the insulating film, a seed layer containing the halogen group is formed on the surface of the insulating film.