Semiconductor device with through silicon via and alignment mark
A semiconductor device with a semiconductor substrate having a first surface and an opposite-facing second surface, a through electrode electrically connected to the semiconductor element and penetrating the semiconductor substrate from the first surface to the second surface, and a conductor, not electrically connected to the semiconductor element, penetrating the semiconductor substrate from the first surface to the second surface, where the through electrode and the conductor have different shapes in plan view.
1. A semiconductor device, comprising:
a semiconductor substrate having a first surface and a second surface located opposite to each other in a thickness direction;
a semiconductor element formed on the first surface of the semiconductor substrate;
a through electrode penetrating the semiconductor substrate from the first surface to the second surface and electrically connected to the semiconductor element, the through electrode having a first shape in plan view; and
a conductor penetrating the semiconductor substrate from the first surface to the second surface and not electrically connected to the semiconductor element, the conductor having a second shape in plan view,
wherein the first shape is different from the second shape.
2. The semiconductor device according to claim 1 , wherein the second shape of the conductor is a polygon.
3. The semiconductor device according to claim 1 , wherein the second shape of the conductor is an L-shape.
4. The semiconductor device according to claim 1 , wherein the conductor has a metal material that is the same as a metal material of the through electrode.
5. The semiconductor device according to claim 1 , further comprising:
an insulating separator penetrating the semiconductor substrate from the first surface to the second surface and surrounding the conductor.
6. The semiconductor device according to claim 5 , wherein the insulating separator is disposed apart from the conductor.
7. The semiconductor device according to claim 5 , wherein the insulating separator is formed of a closed curve in a plane parallel with the first and second surface.
8. The semiconductor device according to claim 5 , wherein the insulating separator directly makes contact with the conductor.
9. The semiconductor device according to claim 5 , wherein the insulating separator includes a silicon nitride film.
10. The semiconductor device according to claim 5 , wherein the insulating separator contains polysilicon.
11. A semiconductor device, comprising:
a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer;
a through electrode penetrating the semiconductor substrate in a thickness direction and which are electrically connected to each other between the semiconductor chips adjacent to each other, the through electrode having a first shape in plan view; and
a conductor penetrating the semiconductor substrate in the thickness direction and which are not electrically connected between the other semiconductor chips, the conductor having a second shape in plan view,
wherein the first shape is different from the second shape.
12. The semiconductor device according to claim 11 , wherein the second shape of the conductor is a polygon.
13. The semiconductor device according to claim 11 , wherein the second shape of the conductor is an L-shape.
14. The semiconductor device according to claim 11 , wherein the conductor has a metal material that is the same as a metal material of the through electrode.
15. The semiconductor device according to claim 11 , further comprising:
an insulating separator penetrating the semiconductor substrate in the thickness direction and surrounding the conductor.
16. The semiconductor device according to claim 15 , wherein the insulating separator is disposed apart from the conductor.
17. The semiconductor device according to claim 15 , wherein the insulating separator is formed of a closed curve in a plane parallel with a surface of the semiconductor substrate.
18. The semiconductor device according to claim 15 , wherein the insulating separator directly makes contact with the conductor.
19. The semiconductor device according to claim 15 , wherein the insulating separator includes a silicon nitride film.
20. The semiconductor device according to claim 15 , wherein the insulating separator contains polysilicon.